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Title: Modulation-doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures grown on GaAs substrates using step-graded In{sub {ital x}}Ga{sub 1{minus}{ital x}}As buffers

Abstract

We have grown modulation-doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures on GaAs substrates using compositionally step-graded In{sub {ital x}}Ga{sub 1{minus}{ital x}}As buffers. Triple-axis x-ray diffraction measurements indicate nearly complete and isotropic strain relaxation in the buffer, lattice matching of the active layers with the top of the buffer, and no significant epilayer tilt. The temperature dependence and the photoresponse of the electron mobility suggest that transport in the heterostructures is limited principally by remote ionized-impurity scattering, with mobility values comparable to those of heterostructures grown lattice-matched to InP. {copyright} {ital 1996 American Vacuum Society}

Authors:
; ;  [1];  [2]
  1. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States)
  2. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
OSTI Identifier:
288990
Report Number(s):
CONF-960117-
Journal ID: JVTBD9; ISSN 0734-211X; TRN: 96:022491
DOE Contract Number:  
AC02-76CH00016; FG02-85ER45183
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 14; Journal Issue: 4; Conference: 23. conference on the physics and chemistry semiconductor interfaces, La Jolla, CA (United States), 21-25 Jan 1996; Other Information: PBD: Jul 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; INDIUM ARSENIDES; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; DOPED MATERIALS; HALL EFFECT; CARRIER MOBILITY; PHOTOCURRENTS; STRAINS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Goldman, R S, Kavanagh, K L, Wieder, H H, and Ehrlich, S N. Modulation-doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures grown on GaAs substrates using step-graded In{sub {ital x}}Ga{sub 1{minus}{ital x}}As buffers. United States: N. p., 1996. Web. doi:10.1116/1.589060.
Goldman, R S, Kavanagh, K L, Wieder, H H, & Ehrlich, S N. Modulation-doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures grown on GaAs substrates using step-graded In{sub {ital x}}Ga{sub 1{minus}{ital x}}As buffers. United States. https://doi.org/10.1116/1.589060
Goldman, R S, Kavanagh, K L, Wieder, H H, and Ehrlich, S N. 1996. "Modulation-doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures grown on GaAs substrates using step-graded In{sub {ital x}}Ga{sub 1{minus}{ital x}}As buffers". United States. https://doi.org/10.1116/1.589060.
@article{osti_288990,
title = {Modulation-doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures grown on GaAs substrates using step-graded In{sub {ital x}}Ga{sub 1{minus}{ital x}}As buffers},
author = {Goldman, R S and Kavanagh, K L and Wieder, H H and Ehrlich, S N},
abstractNote = {We have grown modulation-doped In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As heterostructures on GaAs substrates using compositionally step-graded In{sub {ital x}}Ga{sub 1{minus}{ital x}}As buffers. Triple-axis x-ray diffraction measurements indicate nearly complete and isotropic strain relaxation in the buffer, lattice matching of the active layers with the top of the buffer, and no significant epilayer tilt. The temperature dependence and the photoresponse of the electron mobility suggest that transport in the heterostructures is limited principally by remote ionized-impurity scattering, with mobility values comparable to those of heterostructures grown lattice-matched to InP. {copyright} {ital 1996 American Vacuum Society}},
doi = {10.1116/1.589060},
url = {https://www.osti.gov/biblio/288990}, journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
number = 4,
volume = 14,
place = {United States},
year = {Mon Jul 01 00:00:00 EDT 1996},
month = {Mon Jul 01 00:00:00 EDT 1996}
}