Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon

Title: Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon

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Abstract

TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interface between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.

Authors:

Ghonge, S G; Goo, E ^[1]; Ramesh, R ^[2]; Haakenaasen, R; Fork, D K ^[3]

Univ. of Southern California, Los Angeles, CA (United States)
Bellcore, Red Bank, NJ (United States)
Xerox Palo Alto Research Center, CA (United States)

Publication Date:: 1994-12-31

OSTI Identifier:: 28833

Report Number(s):: CONF-931142-
TRN: 94:010156-0016

Resource Type:: Conference

Resource Relation:: Conference: 1. meeting of the Pacific Rim ceramic societies, Honolulu, HI (United States), 7-10 Nov 1993; Other Information: PBD: 1994; Related Information: Is Part Of Ceramic transactions: Ferroic materials - design, preparation, and characteristics. Volume 43; Bhalla, A.S.; Nair, K.M.; Lloyd, I.K.; Yanagida, H.; Payne, D.A. [eds.]; PB: 438 p.

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; FERROELECTRIC MATERIALS; ABLATION; DEPOSITION; LAMELLAE; PZT; CRYSTAL STRUCTURE; PLZT; HIGH-TC SUPERCONDUCTORS; YTTRIUM OXIDES; BARIUM OXIDES; COPPER OXIDES; BISMUTH OXIDES; STRONTIUM OXIDES; LANTHANUM OXIDES; COBALT OXIDES; SUBSTRATES; PEROVSKITES

Citation Formats


                    Ghonge, S G, Goo, E, Ramesh, R, Haakenaasen, R, and Fork, D K. Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon.  United States: N. p., 1994. 
        Web.

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                    Ghonge, S G, Goo, E, Ramesh, R, Haakenaasen, R, & Fork, D K. Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon.  United States.

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                    Ghonge, S G, Goo, E, Ramesh, R, Haakenaasen, R, and Fork, D K. Sat .  
        "Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon".  United States.

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@article{osti_28833,

  title        = {Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon},

  author       = {Ghonge, S G and Goo, E and Ramesh, R and Haakenaasen, R and Fork, D K},

  abstractNote = {TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interface between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/28833},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1994},

  month        = {12}

}

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