Magnetic-Field-Induced V-Shaped Quantized Conductance Staircase in a Double-Layer Quantum Point Contact

Journal Article · Mon Jan 04 00:00:00 EST 1999 · Physical Review B (Rapid Communication)

DOI:https://doi.org/10.1103/PhysRevB.60.7732· OSTI ID:2883

Lyo, S K

We show that the low-temperature conductance (G) of a quantum point contact consisting of ballistic tunnel-coupled double-layer quantum well wires is modulated by an in-layer magnetic field B{sub {parallel}} perpendicular to the wires due to the anticrossing. In a system with a small g factor, B{sub {parallel}} creates a V-shaped quantum staircase for G, causing it to decrease in steps of 2e{sup 2}/{Dirac_h} to a minimum and then increase to a maximum value, where G may saturate or decrease again at higher B{sub {parallel}}'s. The effect of B{sub {parallel}}-induced mass enhancement and spin splitting is studied. The relevance of the results to recent data is discussed.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 2883
• Report Number(s): SAND99-0007J; ON: DE00002883
• Journal Information: Physical Review B (Rapid Communication), Journal Name: Physical Review B (Rapid Communication)
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
Electric Contacts
Electric Conductivity
Temperature Range 0000-0013 K
Lande Factor
Magnetic Properties
Magnetic Fields