Interaction of hydrogen ions with oxidized GaAs(100) and AlAs(100) surfaces
- Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, California 93106 (United States)
- Stanford Synchrotron Radiation Lab (SSRL), Stanford University, Stanford, California 94305 (United States)
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
We have performed photoemission experiments, using a tunable soft x-ray synchrotron radiation source to study the chemical changes of oxidized GaAs and AlAs surfaces subject to exposure from hydrogen ions. Results indicate that the net effects for hydrogen ion irradiation are (i) the reduction of arsenic and (ii) the growth of the cation oxide components. The reduction of arsenic can result from the formation/desorption of arsine. The oxide overlayer after hydrogen ion treatments is dominated by cation oxides which are the more stable chemical species as described in the phase diagram. This oxide layer should then remain stable in atmosphere. These results can provide insight into the chemical reaction between hydrogen ions and oxidized AlGaAs surfaces. {copyright} {ital 1996 American Vacuum Society}
- OSTI ID:
- 286581
- Report Number(s):
- CONF-960117-; ISSN 0734-211X; TRN: 96:022488
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 14, Issue 4; Conference: 23. conference on the physics and chemistry semiconductor interfaces, La Jolla, CA (United States), 21-25 Jan 1996; Other Information: PBD: Jul 1996
- Country of Publication:
- United States
- Language:
- English
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