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Title: Gate quality Si{sub 3}N{sub 4} prepared by low temperature remote plasma enhanced chemical vapor deposition for III{endash}V semiconductor-based metal{endash}insulator{endash}semiconductor devices

Abstract

We report the properties of silicon nitride films deposited by the electron cyclotron resonance remote plasma enhanced chemical vapor deposition method on Si substrates using SiH{sub 4} and N{sub 2}. The effects of nitrogen/silane gas ratio ({ital R}=N{sub 2}/SiH{sub 4}), electron cyclotron resonance power, substrate temperature, and H on growth, refractive index, chemical composition, and etch rate were investigated. Nominally stoichiometric Si{sub 3}N{sub 4} films were obtained with a refractive index of 1.9{approximately}2.0 at a wavelength of 632.8 nm. The etch rate of the films in a buffered HF solution (7:1) was low ({approximately}0.7 nm/min) and increased with increasing H{sub 2} gas flow rate and decreasing substrate temperature during deposition. Fourier transform infrared spectroscopy and high temperature thermal evolution experiments showed very small amounts of H in the films. A leakage current less than 100 pA/cm{sup 2} at a field of 2 MV/cm, a resistivity of {approx_gt}4{times}10{sup 17} {Omega}cm, and breakdown strengths of 6{endash}11 MV/cm at a current density of 1 {mu}A/cm{sup 2} were observed. These properties are comparable to those of Si{sub 3}N{sub 4} prepared by conventional high temperature (700{degree}C) chemical vapor deposition. The performance of GaAs-based field-effect-transistors in switching and power applications can be enhanced substantially by employingmore » a metal-insulator-semiconductor structure. By taking advantage of an {ital in} {ital situ} process approach, insulator-GaAs structures were successfully gated with excellent interfacial properties. {copyright} {ital 1996 American Vacuum Society}« less

Authors:
; ; ; ; ; ; ; ; ;  [1]; ;  [2]
  1. Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  2. NASA Lewis Research Center, Cleveland, Ohio 44135 (United States)
Publication Date:
Research Org.:
Univ. of Illinois at Urbana-Champaign, IL (United States)
OSTI Identifier:
286578
Report Number(s):
CONF-960117-
Journal ID: JVTBD9; ISSN 0734-211X; TRN: 9615M0257
DOE Contract Number:  
FG02-91ER45439
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 14; Journal Issue: 4; Conference: 23. conference on the physics and chemistry semiconductor interfaces, La Jolla, CA (United States), 21-25 Jan 1996; Other Information: PBD: Jul 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; FIELD EFFECT TRANSISTORS; SILICON NITRIDES; CHEMICAL VAPOR DEPOSITION; GALLIUM ARSENIDES; HIGH-FREQUENCY DISCHARGES; CHEMICAL COMPOSITION; REFRACTIVE INDEX; INFRARED SPECTRA; ELECTRICAL PROPERTIES; GATES; MIS JUNCTIONS

Citation Formats

Park, D G, Tao, M, Li, D, Botchkarev, A E, Fan, Z, Wang, Z, Mohammad, S N, Rockett, A, Abelson, J R, Morkoc, H, Heyd, A R, and Alterovitz, S A. Gate quality Si{sub 3}N{sub 4} prepared by low temperature remote plasma enhanced chemical vapor deposition for III{endash}V semiconductor-based metal{endash}insulator{endash}semiconductor devices. United States: N. p., 1996. Web. doi:10.1116/1.589003.
Park, D G, Tao, M, Li, D, Botchkarev, A E, Fan, Z, Wang, Z, Mohammad, S N, Rockett, A, Abelson, J R, Morkoc, H, Heyd, A R, & Alterovitz, S A. Gate quality Si{sub 3}N{sub 4} prepared by low temperature remote plasma enhanced chemical vapor deposition for III{endash}V semiconductor-based metal{endash}insulator{endash}semiconductor devices. United States. https://doi.org/10.1116/1.589003
Park, D G, Tao, M, Li, D, Botchkarev, A E, Fan, Z, Wang, Z, Mohammad, S N, Rockett, A, Abelson, J R, Morkoc, H, Heyd, A R, and Alterovitz, S A. 1996. "Gate quality Si{sub 3}N{sub 4} prepared by low temperature remote plasma enhanced chemical vapor deposition for III{endash}V semiconductor-based metal{endash}insulator{endash}semiconductor devices". United States. https://doi.org/10.1116/1.589003.
@article{osti_286578,
title = {Gate quality Si{sub 3}N{sub 4} prepared by low temperature remote plasma enhanced chemical vapor deposition for III{endash}V semiconductor-based metal{endash}insulator{endash}semiconductor devices},
author = {Park, D G and Tao, M and Li, D and Botchkarev, A E and Fan, Z and Wang, Z and Mohammad, S N and Rockett, A and Abelson, J R and Morkoc, H and Heyd, A R and Alterovitz, S A},
abstractNote = {We report the properties of silicon nitride films deposited by the electron cyclotron resonance remote plasma enhanced chemical vapor deposition method on Si substrates using SiH{sub 4} and N{sub 2}. The effects of nitrogen/silane gas ratio ({ital R}=N{sub 2}/SiH{sub 4}), electron cyclotron resonance power, substrate temperature, and H on growth, refractive index, chemical composition, and etch rate were investigated. Nominally stoichiometric Si{sub 3}N{sub 4} films were obtained with a refractive index of 1.9{approximately}2.0 at a wavelength of 632.8 nm. The etch rate of the films in a buffered HF solution (7:1) was low ({approximately}0.7 nm/min) and increased with increasing H{sub 2} gas flow rate and decreasing substrate temperature during deposition. Fourier transform infrared spectroscopy and high temperature thermal evolution experiments showed very small amounts of H in the films. A leakage current less than 100 pA/cm{sup 2} at a field of 2 MV/cm, a resistivity of {approx_gt}4{times}10{sup 17} {Omega}cm, and breakdown strengths of 6{endash}11 MV/cm at a current density of 1 {mu}A/cm{sup 2} were observed. These properties are comparable to those of Si{sub 3}N{sub 4} prepared by conventional high temperature (700{degree}C) chemical vapor deposition. The performance of GaAs-based field-effect-transistors in switching and power applications can be enhanced substantially by employing a metal-insulator-semiconductor structure. By taking advantage of an {ital in} {ital situ} process approach, insulator-GaAs structures were successfully gated with excellent interfacial properties. {copyright} {ital 1996 American Vacuum Society}},
doi = {10.1116/1.589003},
url = {https://www.osti.gov/biblio/286578}, journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
number = 4,
volume = 14,
place = {United States},
year = {1996},
month = {7}
}