Gate quality Si{sub 3}N{sub 4} prepared by low temperature remote plasma enhanced chemical vapor deposition for III{endash}V semiconductor-based metal{endash}insulator{endash}semiconductor devices
- Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
- NASA Lewis Research Center, Cleveland, Ohio 44135 (United States)
We report the properties of silicon nitride films deposited by the electron cyclotron resonance remote plasma enhanced chemical vapor deposition method on Si substrates using SiH{sub 4} and N{sub 2}. The effects of nitrogen/silane gas ratio ({ital R}=N{sub 2}/SiH{sub 4}), electron cyclotron resonance power, substrate temperature, and H on growth, refractive index, chemical composition, and etch rate were investigated. Nominally stoichiometric Si{sub 3}N{sub 4} films were obtained with a refractive index of 1.9{approximately}2.0 at a wavelength of 632.8 nm. The etch rate of the films in a buffered HF solution (7:1) was low ({approximately}0.7 nm/min) and increased with increasing H{sub 2} gas flow rate and decreasing substrate temperature during deposition. Fourier transform infrared spectroscopy and high temperature thermal evolution experiments showed very small amounts of H in the films. A leakage current less than 100 pA/cm{sup 2} at a field of 2 MV/cm, a resistivity of {approx_gt}4{times}10{sup 17} {Omega}cm, and breakdown strengths of 6{endash}11 MV/cm at a current density of 1 {mu}A/cm{sup 2} were observed. These properties are comparable to those of Si{sub 3}N{sub 4} prepared by conventional high temperature (700{degree}C) chemical vapor deposition. The performance of GaAs-based field-effect-transistors in switching and power applications can be enhanced substantially by employing a metal-insulator-semiconductor structure. By taking advantage of an {ital in} {ital situ} process approach, insulator-GaAs structures were successfully gated with excellent interfacial properties. {copyright} {ital 1996 American Vacuum Society}
- Research Organization:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 286578
- Report Number(s):
- CONF-960117-; ISSN 0734-211X; TRN: 9615M0257
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 14, Issue 4; Conference: 23. conference on the physics and chemistry semiconductor interfaces, La Jolla, CA (United States), 21-25 Jan 1996; Other Information: PBD: Jul 1996
- Country of Publication:
- United States
- Language:
- English
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