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Title: Deep-etch silicon millimeter waveguide structure for electron acceleration

Abstract

An ultrahigh vacuum compatible planar corrugated millimeter mm-waveguide structure (410-{mu}m-deep) possessing bi-fold symmetry and a precision beam aperture (800 {mu}m) has been fabricated using silicon processing technology, modeled with numerical analysis software, geometrically characterized, and compared to a similar waveguide fabricated using deep x-ray lithography (DXL) techniques. The waveguide was fabricated to operate at 60 GHz ({lambda}=5 mm) with fields suitable for 2{pi}/3 phase advance operation. Multichip alignment technology was used to provide a semiclosed conducting surface with aperture-coupled periodic resonator cavities. A pair of Si/Pyrex composite metallized substrates patterned with corrugated geometries have been vertically stacked with 980-{mu}m-diam Pyrex capillaries. Geometrical analysis of the muffin-tin waveguide was divided into two classifications: substrate feature error and die-to-die orientation error. Both types of error were characterized with the following results: feature accuracy was maintained to 0.1{percent}{endash}1.0{percent} tolerances in all directions (5 {mu}m or less in most cases) and die-to-die aperture distance agreed to within {approximately}3{percent} of theoretical calculation. Methods of improving these geometrical tolerances are suggested and critical issues are addressed. Electromagnetic testing of the mm waveguide has been investigated and a bead was fabricated for use in a bead-pull perturbation measurement of acceleration properties. The concluding section compares deep-etch siliconmore » and DXL approaches for the fabrication of the {open_quote}{open_quote}micro-linac.{close_quote}{close_quote} It is concluded that through further refinement of thermal and conductive properties that the silicon waveguide is a viable method of constructing a micro-linac mm waveguide, requiring less fabrication complexity, processing time, and capital equipment investment than DXL. {copyright} {ital 1996 American Vacuum Society}« less

Authors:
;  [1]
  1. Department of Electrical Engineering and Computer Science, The University of Illinois at Chicago, Chicago, Illinois 60607 (United States)
Publication Date:
OSTI Identifier:
286575
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 14; Journal Issue: 4; Other Information: PBD: Jul 1996
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; LINEAR ACCELERATORS; WAVEGUIDES; ELECTRON BEAMS; SILICON; ETCHING; PYREX; DESIGN; FABRICATION; ACCURACY; COMPUTERIZED SIMULATION; LITHOGRAPHY

Citation Formats

Willke, T L, and Feinerman, A D. Deep-etch silicon millimeter waveguide structure for electron acceleration. United States: N. p., 1996. Web. doi:10.1116/1.588763.
Willke, T L, & Feinerman, A D. Deep-etch silicon millimeter waveguide structure for electron acceleration. United States. doi:10.1116/1.588763.
Willke, T L, and Feinerman, A D. Mon . "Deep-etch silicon millimeter waveguide structure for electron acceleration". United States. doi:10.1116/1.588763.
@article{osti_286575,
title = {Deep-etch silicon millimeter waveguide structure for electron acceleration},
author = {Willke, T L and Feinerman, A D},
abstractNote = {An ultrahigh vacuum compatible planar corrugated millimeter mm-waveguide structure (410-{mu}m-deep) possessing bi-fold symmetry and a precision beam aperture (800 {mu}m) has been fabricated using silicon processing technology, modeled with numerical analysis software, geometrically characterized, and compared to a similar waveguide fabricated using deep x-ray lithography (DXL) techniques. The waveguide was fabricated to operate at 60 GHz ({lambda}=5 mm) with fields suitable for 2{pi}/3 phase advance operation. Multichip alignment technology was used to provide a semiclosed conducting surface with aperture-coupled periodic resonator cavities. A pair of Si/Pyrex composite metallized substrates patterned with corrugated geometries have been vertically stacked with 980-{mu}m-diam Pyrex capillaries. Geometrical analysis of the muffin-tin waveguide was divided into two classifications: substrate feature error and die-to-die orientation error. Both types of error were characterized with the following results: feature accuracy was maintained to 0.1{percent}{endash}1.0{percent} tolerances in all directions (5 {mu}m or less in most cases) and die-to-die aperture distance agreed to within {approximately}3{percent} of theoretical calculation. Methods of improving these geometrical tolerances are suggested and critical issues are addressed. Electromagnetic testing of the mm waveguide has been investigated and a bead was fabricated for use in a bead-pull perturbation measurement of acceleration properties. The concluding section compares deep-etch silicon and DXL approaches for the fabrication of the {open_quote}{open_quote}micro-linac.{close_quote}{close_quote} It is concluded that through further refinement of thermal and conductive properties that the silicon waveguide is a viable method of constructing a micro-linac mm waveguide, requiring less fabrication complexity, processing time, and capital equipment investment than DXL. {copyright} {ital 1996 American Vacuum Society}},
doi = {10.1116/1.588763},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
number = 4,
volume = 14,
place = {United States},
year = {1996},
month = {7}
}