AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress
- Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131-6081 (United States)
- Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185-1081 (United States)
This study focused on the performance of commercial AlGaN/InGaN/GaN blue light emitting diodes (LEDs) under high current pulse conditions. The results of deep level transient spectroscopy (DLTS), thermally stimulated capacitance, and admittance spectroscopy measurements performed on stressed devices, showed no evidence of any deep-level defects that may have developed as a result of high current pulses. Physical analysis of stressed LEDs indicated a strong connection between the high intrinsic defect density in these devices and the resulting mode of degradation. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 286517
- Journal Information:
- Applied Physics Letters, Vol. 69, Issue 7; Other Information: PBD: Aug 1996
- Country of Publication:
- United States
- Language:
- English
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