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Title: Phonon amplification using evaporation and adsorption of helium

Abstract

We report the results of experiments designed to investigate the feasibility of amplifying a phonon signal using the evaporation of helium from a superfluid film and its subsequent readsorption onto a helium-free surface. We envision a multistage amplifier in which helium is evaporated from a wafer with a helium film only on one side and then adsorbed onto the film-free surface of a similar wafer. The phonons created by the adsorption reach the film on the opposite side of the wafer and potentially desorb more helium than was evaporated by the first wafer. The amplification would come from the high ratio of the binding energy of a helium atom to a film-free surface relative to the binding energy to the liquid. A number of experiments are reported that investigate the efficiencies of the individual steps of the process. The gain per stage is found to be about 3 for high-energy densities in which multiphonon processes are possible. At low-energy densities, the energy deposited into a film-free wafer is found to be less than the original input energy, with the ratio of output to input energy 0.2. Since in applications requiring amplification the phonon density produced by the adsorption of heliummore » on a wafer will be low, the configuration we have studied{emdash}phonons produced in silicon coated with a saturated {sup 4}He film{emdash}will not result in amplification. However, other configurations might improve the efficiency enough to make an amplifier possible. {copyright} {ital 1996 The American Physical Society.}« less

Authors:
; ; ; ; ; ;  [1]
  1. Department of Physics, Brown University, Providence, Rhode Island 02912 (United States)
Publication Date:
OSTI Identifier:
285630
DOE Contract Number:  
FG02-88ER40452
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter
Additional Journal Information:
Journal Volume: 54; Journal Issue: 1; Other Information: PBD: Jul 1996
Country of Publication:
United States
Language:
English
Subject:
66 PHYSICS; HELIUM II; ADSORPTION; DESORPTION; PHONONS; AMPLIFICATION; PARTICLE IDENTIFICATION; SILICON; SORPTIVE PROPERTIES; CESIUM; HELIUM 3; TRANSPORT THEORY; ACTIVATION ENERGY; ISOTOPE EFFECTS; TEMPERATURE DEPENDENCE; LIFETIME; NONLUMINOUS MATTER; MEASURING INSTRUMENTS; INTERGALACTIC SPACE; BALLISTICS

Citation Formats

More, T, Adams, J S, Bandler, S R, Broueer, S M, Lanou, R E, Maris, H J, and Seidel, G M. Phonon amplification using evaporation and adsorption of helium. United States: N. p., 1996. Web. doi:10.1103/PhysRevB.54.534.
More, T, Adams, J S, Bandler, S R, Broueer, S M, Lanou, R E, Maris, H J, & Seidel, G M. Phonon amplification using evaporation and adsorption of helium. United States. doi:10.1103/PhysRevB.54.534.
More, T, Adams, J S, Bandler, S R, Broueer, S M, Lanou, R E, Maris, H J, and Seidel, G M. Mon . "Phonon amplification using evaporation and adsorption of helium". United States. doi:10.1103/PhysRevB.54.534.
@article{osti_285630,
title = {Phonon amplification using evaporation and adsorption of helium},
author = {More, T and Adams, J S and Bandler, S R and Broueer, S M and Lanou, R E and Maris, H J and Seidel, G M},
abstractNote = {We report the results of experiments designed to investigate the feasibility of amplifying a phonon signal using the evaporation of helium from a superfluid film and its subsequent readsorption onto a helium-free surface. We envision a multistage amplifier in which helium is evaporated from a wafer with a helium film only on one side and then adsorbed onto the film-free surface of a similar wafer. The phonons created by the adsorption reach the film on the opposite side of the wafer and potentially desorb more helium than was evaporated by the first wafer. The amplification would come from the high ratio of the binding energy of a helium atom to a film-free surface relative to the binding energy to the liquid. A number of experiments are reported that investigate the efficiencies of the individual steps of the process. The gain per stage is found to be about 3 for high-energy densities in which multiphonon processes are possible. At low-energy densities, the energy deposited into a film-free wafer is found to be less than the original input energy, with the ratio of output to input energy 0.2. Since in applications requiring amplification the phonon density produced by the adsorption of helium on a wafer will be low, the configuration we have studied{emdash}phonons produced in silicon coated with a saturated {sup 4}He film{emdash}will not result in amplification. However, other configurations might improve the efficiency enough to make an amplifier possible. {copyright} {ital 1996 The American Physical Society.}},
doi = {10.1103/PhysRevB.54.534},
journal = {Physical Review, B: Condensed Matter},
number = 1,
volume = 54,
place = {United States},
year = {1996},
month = {7}
}