Buried-gate oxide thinning during epitaxial lateral overgrowth for dual-gated metal{endash}oxide{endash}semiconductor field-effect transistors
- School of Electrical and Computer Engineering, Purdue University, W. Lafayette, Indiana 47907-1285 (United States)
During epitaxial lateral overgrowth of single-crystal silicon over thermal SiO{sub 2}, in the low-pressure chemical vapor deposition reactor environment, thinning and even pinholes can occur in the underlying gate oxide of in dual-gated silicon on insulator metal{endash}oxide{endash}semiconductor field-effect transistors (MOSFETs). The epitaxial lateral overgrowth was grown using dichlorosilane (DCS), HCl, and H{sub 2} at 970{degree}C and 40 Torr. Although the etch rate was very small, the thinning was large enough to change the bottom channel threshold voltage (Vt). Oxide thickness measurements, obtained by ellipsometry and by profilometer measurements, indicated an etch rate of about 0.1 nm/min, which was independently confirmed from MOSFET Vt shift measurements. The oxide etch rate decreased with increasing concentration of HCl and was less for oxides grown from heavily arsenic-doped than from lightly doped boron silicon. {copyright} {ital 1996 American Vacuum Society}
- OSTI ID:
- 285558
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 14, Issue 3; Other Information: PBD: May 1996
- Country of Publication:
- United States
- Language:
- English
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