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Title: Phase equilibria of the Ga{endash}Ni{endash}As ternary system

Abstract

Phase equilibria were investigated in the Ga{endash}Ni{endash}As ternary system, with particular emphasis on the regions of technological importance to Ni/GaAs electrical contacts. A 600{degree}C Gibbs isotherm was constructed using x-ray-diffraction analysis and electron probe microanalysis of annealed samples. Additionally, three isopleths (NiAs{endash}GaAs, NiGa{endash}NiAs, and NiGa{endash}GaAs) and a partial liquidus projection were established using differential thermal analysis and metallography. These data were utilized to clarify some discrepancies in the literature pertaining to the constitution of the Ga{endash}Ni{endash}As system, particularly questions about the existence of ternary phases. It was demonstrated that at 600{degree}C, previously reported ternary phases were actually specific compositions of the binary phase, NiAs, which exhibits significant ternary solubility. Additional x-ray-diffraction and differential thermal analysis experiments suggested that superlattice structures based on the NiAs structure may become stable at lower temperatures. A ternary eutectic reaction was shown to occur at 810{plus_minus}5{degree}C, with eutectic point at the composition Ni{sub 0.48}Ga{sub 0.30}As{sub 0.22}. The existence of this eutectic reaction has important ramifications for the development of Ni-based electrical contacts to GaAs because any metallization scheme with a composition within the region bounded by NiGa, NiAs, and GaAs, as well as elemental Ni, will experience at least partial liquid formation at temperatures greatermore » than 810{degree}C. {copyright} {ital 1996 American Institute of Physics.}« less

Authors:
 [1];  [2];  [3];  [1]
  1. Department of Materials Science and Engineering, University of Wisconsin--Madison, 1509 University Avenue, Madison, Wisconsin 53706 (United States)
  2. Chemistry and Material Science, Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94551 (United States)
  3. Intel Corporation, Portland Technology Development, 5200 N. E. Elam Young Parkway, Hillsboro, Oregon 97124 (United States)
Publication Date:
OSTI Identifier:
285540
DOE Contract Number:  
FG02-86ER45274
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 80; Journal Issue: 1; Other Information: PBD: Jul 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM; PHASE DIAGRAMS; NICKEL; ARSENIC; TERNARY ALLOY SYSTEMS; ISOTHERMS; ELECTRIC CONTACTS; SUPERLATTICES; EUTECTICS; INTEGRATED CIRCUITS; METALLIZATION

Citation Formats

Ingerly, D.B., Swenson, D., Jan, C., and Chang, Y.A. Phase equilibria of the Ga{endash}Ni{endash}As ternary system. United States: N. p., 1996. Web. doi:10.1063/1.362758.
Ingerly, D.B., Swenson, D., Jan, C., & Chang, Y.A. Phase equilibria of the Ga{endash}Ni{endash}As ternary system. United States. doi:10.1063/1.362758.
Ingerly, D.B., Swenson, D., Jan, C., and Chang, Y.A. Mon . "Phase equilibria of the Ga{endash}Ni{endash}As ternary system". United States. doi:10.1063/1.362758.
@article{osti_285540,
title = {Phase equilibria of the Ga{endash}Ni{endash}As ternary system},
author = {Ingerly, D.B. and Swenson, D. and Jan, C. and Chang, Y.A.},
abstractNote = {Phase equilibria were investigated in the Ga{endash}Ni{endash}As ternary system, with particular emphasis on the regions of technological importance to Ni/GaAs electrical contacts. A 600{degree}C Gibbs isotherm was constructed using x-ray-diffraction analysis and electron probe microanalysis of annealed samples. Additionally, three isopleths (NiAs{endash}GaAs, NiGa{endash}NiAs, and NiGa{endash}GaAs) and a partial liquidus projection were established using differential thermal analysis and metallography. These data were utilized to clarify some discrepancies in the literature pertaining to the constitution of the Ga{endash}Ni{endash}As system, particularly questions about the existence of ternary phases. It was demonstrated that at 600{degree}C, previously reported ternary phases were actually specific compositions of the binary phase, NiAs, which exhibits significant ternary solubility. Additional x-ray-diffraction and differential thermal analysis experiments suggested that superlattice structures based on the NiAs structure may become stable at lower temperatures. A ternary eutectic reaction was shown to occur at 810{plus_minus}5{degree}C, with eutectic point at the composition Ni{sub 0.48}Ga{sub 0.30}As{sub 0.22}. The existence of this eutectic reaction has important ramifications for the development of Ni-based electrical contacts to GaAs because any metallization scheme with a composition within the region bounded by NiGa, NiAs, and GaAs, as well as elemental Ni, will experience at least partial liquid formation at temperatures greater than 810{degree}C. {copyright} {ital 1996 American Institute of Physics.}},
doi = {10.1063/1.362758},
journal = {Journal of Applied Physics},
number = 1,
volume = 80,
place = {United States},
year = {1996},
month = {7}
}