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Title: Charge state control of hydrogenation in silicon

Abstract

We demonstrate that periodic exposure to zero bias during {ital in} {ital situ} hydrogenation of reverse-biased {ital p}-type Schottky barrier structures has dramatic effects on H penetration. H influx can be slowed or even stopped by such protocols. By contrast, similar pulsing techniques produce almost no changes of penetration in {ital n}-type barriers during hydrogenation; this latter observation is in sharp contrast to the expectations that charge conversion from H{sup +} to H{sup {minus}} would reverse the drift of H species. We suggest that these effects are caused by the charge conversion of relatively immobile H-related defects. In the {ital p}-type barriers this results in a weakening or reversal of the near surface electric field, effectively stopping the drift of H{sup +} into the bulk. {copyright} {ital 1996 American Institute of Physics.}

Authors:
;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
Research Org.:
Sandia National Laboratory
OSTI Identifier:
285536
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 80; Journal Issue: 1; Other Information: PBD: Jul 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; HYDROGENATION; SCHOTTKY BARRIER DIODES; CONTROL; CHARGE STATES; DIFFUSION; HYDROGEN IONS; ELECTRIC FIELDS

Citation Formats

Seager, C H, and Anderson, R A. Charge state control of hydrogenation in silicon. United States: N. p., 1996. Web. doi:10.1063/1.362825.
Seager, C H, & Anderson, R A. Charge state control of hydrogenation in silicon. United States. doi:10.1063/1.362825.
Seager, C H, and Anderson, R A. Mon . "Charge state control of hydrogenation in silicon". United States. doi:10.1063/1.362825.
@article{osti_285536,
title = {Charge state control of hydrogenation in silicon},
author = {Seager, C H and Anderson, R A},
abstractNote = {We demonstrate that periodic exposure to zero bias during {ital in} {ital situ} hydrogenation of reverse-biased {ital p}-type Schottky barrier structures has dramatic effects on H penetration. H influx can be slowed or even stopped by such protocols. By contrast, similar pulsing techniques produce almost no changes of penetration in {ital n}-type barriers during hydrogenation; this latter observation is in sharp contrast to the expectations that charge conversion from H{sup +} to H{sup {minus}} would reverse the drift of H species. We suggest that these effects are caused by the charge conversion of relatively immobile H-related defects. In the {ital p}-type barriers this results in a weakening or reversal of the near surface electric field, effectively stopping the drift of H{sup +} into the bulk. {copyright} {ital 1996 American Institute of Physics.}},
doi = {10.1063/1.362825},
journal = {Journal of Applied Physics},
number = 1,
volume = 80,
place = {United States},
year = {1996},
month = {7}
}