Grain boundary effects on carrier transport in undoped polycrystalline chemical-vapor-deposited diamond
- Los Alamos National Laboratory, D429, Los Alamos, New Mexico 87545 (United States)
A quantitative measure of grain-boundary effects on the carrier transport properties in polycrystalline chemical-vapor-deposited diamond has been obtained using a 10-ns hard x-ray excitation source. Two device geometries were used to gain insight into the extent of grain-boundary effects: one having the applied electric field normal and the other parallel to the grain orientation. The applied electric field intensity was varied to adjust the mean-free carrier drift distance. The degradation in the carrier transport properties at an electric field intensity of 10 kV/cm by the grain-boundary appears to be approximately a factor of two in comparison to the intragrain carrier transport.{copyright} {ital 1996 American Institute of Physics}
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 284238
- Journal Information:
- Applied Physics Letters, Vol. 68, Issue 21; Other Information: PBD: May 1996
- Country of Publication:
- United States
- Language:
- English
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