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Title: Ion implanted Bragg{endash}Fresnel lens

Abstract

We have investigated the feasibility of widening the bandpath of the Bragg{endash}Fresnel optical element through the use of ion implantation. The focusing properties of Bragg{endash}Fresnel lenses (BFLs) were studied as a function of the implantation dose and energy. An enhancement of the focus intensity of up to 15{percent} was found, which is less than expected. Due to the complicated scattering of the low energy ions inside the micrometer- and submicrometer-sized crystal features that make up the BFL relief, the implantation technology destroys the peripheral zones of the BFL more than it increases the intensity in the focus. Nevertheless we believe that high energy implantation can be successfully used to modify the BFL reflectivity, especially in the case of nearly backscattering reflection. {copyright} {ital 1996 American Institute of Physics.}

Authors:
; ;  [1];  [2]
  1. European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex (France)
  2. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District (Russia)
Publication Date:
OSTI Identifier:
284094
Resource Type:
Journal Article
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 67; Journal Issue: 5; Other Information: PBD: May 1996
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; FRESNEL LENS; ION IMPLANTATION; X RADIATION; BRAGG REFLECTION; SURFACE TREATMENTS; ENERGY DEPENDENCE; FOCUSING

Citation Formats

Souvorov, A, Snigirev, A, Snigireva, I, and Aristova, E. Ion implanted Bragg{endash}Fresnel lens. United States: N. p., 1996. Web. doi:10.1063/1.1146985.
Souvorov, A, Snigirev, A, Snigireva, I, & Aristova, E. Ion implanted Bragg{endash}Fresnel lens. United States. https://doi.org/10.1063/1.1146985
Souvorov, A, Snigirev, A, Snigireva, I, and Aristova, E. Wed . "Ion implanted Bragg{endash}Fresnel lens". United States. https://doi.org/10.1063/1.1146985.
@article{osti_284094,
title = {Ion implanted Bragg{endash}Fresnel lens},
author = {Souvorov, A and Snigirev, A and Snigireva, I and Aristova, E},
abstractNote = {We have investigated the feasibility of widening the bandpath of the Bragg{endash}Fresnel optical element through the use of ion implantation. The focusing properties of Bragg{endash}Fresnel lenses (BFLs) were studied as a function of the implantation dose and energy. An enhancement of the focus intensity of up to 15{percent} was found, which is less than expected. Due to the complicated scattering of the low energy ions inside the micrometer- and submicrometer-sized crystal features that make up the BFL relief, the implantation technology destroys the peripheral zones of the BFL more than it increases the intensity in the focus. Nevertheless we believe that high energy implantation can be successfully used to modify the BFL reflectivity, especially in the case of nearly backscattering reflection. {copyright} {ital 1996 American Institute of Physics.}},
doi = {10.1063/1.1146985},
url = {https://www.osti.gov/biblio/284094}, journal = {Review of Scientific Instruments},
number = 5,
volume = 67,
place = {United States},
year = {1996},
month = {5}
}