Near-edge x-ray absorption fine structure study of bonding modifications in BN thin films by ion implantation

Journal Article · Wed May 01 00:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.116334· OSTI ID:283792

Jimenez, I; Jankowski, A; Terminello, L J; Carlisle, J A; Sutherland, D G ^[1]; Doll, G L; Mantese, J V ^[2]; Tong, W M; Shuh, D K ^[3]; Himpsel, F J ^[4]

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1. Lawrence Livermore National Laboratory, Livermore, California 94551 (United States)
2. G. M. Research Laboratory, Warren, Michigan 48090 (United States)
3. Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
4. Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

Near-edge x-ray absorption fine structure (NEXAFS) has been used to study the defect content and the bonding modifications induced in BN thin films by ion implantation. The initial films were hexagonal-like BN grown on Si(100) by pulsed laser deposition. Subsequent ion implantation with N{sub 2}{sup +} at 180 keV induces the formation of a significant proportion of {ital sp{sup 3}} bonding (cubic-like), and the formation of nitrogen void defects in the remaining {ital sp{sup 2}} BN. These modifications in the bonding of a film lacking long range order can only be distinguished with a local order technique like NEXAFS. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• DOE Contract Number: AC03-76SF00098; W-7405-ENG-48
• OSTI ID: 283792
• Journal Information: Applied Physics Letters, Vol. 68, Issue 20; Other Information: PBD: May 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON NITRIDES
PHYSICAL RADIATION EFFECTS
VOIDS
MICROSTRUCTURE
X-RAY SPECTROSCOPY
ABSORPTION SPECTROSCOPY
CRYSTAL DEFECTS
CHEMICAL BONDS
ION IMPLANTATION
THIN FILMS