Strongly localized excitons in gallium nitride
Abstract
We report on strong excitonic luminescence in wurtzite GaN at 3.309 and 3.365 eV ({ital T}=6 K). These lines lie well below the band gap and are found commonly in layers grown by different techniques and on different substrates. From detailed photoluminescence investigations we find small thermal activation energies and a very weak electron{endash}phonon coupling. The photoluminescence behavior under hydrostatic pressure is indicative of strongly localized defects. These findings are similar to observations of excitons localized at extended defects such as dislocations in II{endash}VI compounds. {copyright} {ital 1995 American Institute of Physics.}
- Authors:
-
- Lawrence Berkeley Laboratory and University of California, Berkeley, California 94720 (United States)
- Molecular Beam Eptiaxy Laboratory, Department of Electrical, Computer and System Engineering, Boston University, Boston, Massachusetts 02215 (United States)
- Ioffe Physico-Technical Institute, 194021 St. Petersburg (Russia)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 283786
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 68; Journal Issue: 18; Other Information: PBD: Apr 1996
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; GALLIUM NITRIDES; PHOTOLUMINESCENCE; PRESSURE DEPENDENCE; EXCITONS; CRYSTAL DEFECTS; ELECTRON-PHONON COUPLING; ACTIVATION ENERGY; BOUND STATE; LOCALIZED STATES; DEFECT STATES
Citation Formats
Wetzel, C, Fischer, S, Krueger, J, Haller, E E, Molnar, R J, Moustakas, T D, Mokhov, E N, and Baranov, P G. Strongly localized excitons in gallium nitride. United States: N. p., 1996.
Web. doi:10.1063/1.116182.
Wetzel, C, Fischer, S, Krueger, J, Haller, E E, Molnar, R J, Moustakas, T D, Mokhov, E N, & Baranov, P G. Strongly localized excitons in gallium nitride. United States. https://doi.org/10.1063/1.116182
Wetzel, C, Fischer, S, Krueger, J, Haller, E E, Molnar, R J, Moustakas, T D, Mokhov, E N, and Baranov, P G. 1996.
"Strongly localized excitons in gallium nitride". United States. https://doi.org/10.1063/1.116182.
@article{osti_283786,
title = {Strongly localized excitons in gallium nitride},
author = {Wetzel, C and Fischer, S and Krueger, J and Haller, E E and Molnar, R J and Moustakas, T D and Mokhov, E N and Baranov, P G},
abstractNote = {We report on strong excitonic luminescence in wurtzite GaN at 3.309 and 3.365 eV ({ital T}=6 K). These lines lie well below the band gap and are found commonly in layers grown by different techniques and on different substrates. From detailed photoluminescence investigations we find small thermal activation energies and a very weak electron{endash}phonon coupling. The photoluminescence behavior under hydrostatic pressure is indicative of strongly localized defects. These findings are similar to observations of excitons localized at extended defects such as dislocations in II{endash}VI compounds. {copyright} {ital 1995 American Institute of Physics.}},
doi = {10.1063/1.116182},
url = {https://www.osti.gov/biblio/283786},
journal = {Applied Physics Letters},
number = 18,
volume = 68,
place = {United States},
year = {Mon Apr 01 00:00:00 EST 1996},
month = {Mon Apr 01 00:00:00 EST 1996}
}
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