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Title: Strongly localized excitons in gallium nitride

Abstract

We report on strong excitonic luminescence in wurtzite GaN at 3.309 and 3.365 eV ({ital T}=6 K). These lines lie well below the band gap and are found commonly in layers grown by different techniques and on different substrates. From detailed photoluminescence investigations we find small thermal activation energies and a very weak electron{endash}phonon coupling. The photoluminescence behavior under hydrostatic pressure is indicative of strongly localized defects. These findings are similar to observations of excitons localized at extended defects such as dislocations in II{endash}VI compounds. {copyright} {ital 1995 American Institute of Physics.}

Authors:
; ; ;  [1]; ;  [2]; ;  [3]
  1. Lawrence Berkeley Laboratory and University of California, Berkeley, California 94720 (United States)
  2. Molecular Beam Eptiaxy Laboratory, Department of Electrical, Computer and System Engineering, Boston University, Boston, Massachusetts 02215 (United States)
  3. Ioffe Physico-Technical Institute, 194021 St. Petersburg (Russia)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
OSTI Identifier:
283786
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 68; Journal Issue: 18; Other Information: PBD: Apr 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; PHOTOLUMINESCENCE; PRESSURE DEPENDENCE; EXCITONS; CRYSTAL DEFECTS; ELECTRON-PHONON COUPLING; ACTIVATION ENERGY; BOUND STATE; LOCALIZED STATES; DEFECT STATES

Citation Formats

Wetzel, C, Fischer, S, Krueger, J, Haller, E E, Molnar, R J, Moustakas, T D, Mokhov, E N, and Baranov, P G. Strongly localized excitons in gallium nitride. United States: N. p., 1996. Web. doi:10.1063/1.116182.
Wetzel, C, Fischer, S, Krueger, J, Haller, E E, Molnar, R J, Moustakas, T D, Mokhov, E N, & Baranov, P G. Strongly localized excitons in gallium nitride. United States. https://doi.org/10.1063/1.116182
Wetzel, C, Fischer, S, Krueger, J, Haller, E E, Molnar, R J, Moustakas, T D, Mokhov, E N, and Baranov, P G. 1996. "Strongly localized excitons in gallium nitride". United States. https://doi.org/10.1063/1.116182.
@article{osti_283786,
title = {Strongly localized excitons in gallium nitride},
author = {Wetzel, C and Fischer, S and Krueger, J and Haller, E E and Molnar, R J and Moustakas, T D and Mokhov, E N and Baranov, P G},
abstractNote = {We report on strong excitonic luminescence in wurtzite GaN at 3.309 and 3.365 eV ({ital T}=6 K). These lines lie well below the band gap and are found commonly in layers grown by different techniques and on different substrates. From detailed photoluminescence investigations we find small thermal activation energies and a very weak electron{endash}phonon coupling. The photoluminescence behavior under hydrostatic pressure is indicative of strongly localized defects. These findings are similar to observations of excitons localized at extended defects such as dislocations in II{endash}VI compounds. {copyright} {ital 1995 American Institute of Physics.}},
doi = {10.1063/1.116182},
url = {https://www.osti.gov/biblio/283786}, journal = {Applied Physics Letters},
number = 18,
volume = 68,
place = {United States},
year = {Mon Apr 01 00:00:00 EST 1996},
month = {Mon Apr 01 00:00:00 EST 1996}
}