Chemical Solution Processing of Strontium Bismuth Tantalate Films
We describe Chemical Solution Deposition (CSD) processes by which Strontium Bismuth Tantalate (SBT) thin films can be prepared at temperatures as low as 550 C. In this paper, we will present strategies used to optimize the properties of the films including solution chemistry, film composition, the nature of the substrate (or bottom electrode) used, and the thermal processing cycle. Under suitable conditions, {approximately} 1700 {angstrom} films can be prepared which have a large switchable polarization (2P{sub r} > 10{micro}C/cm{sup 2}), and an operating voltage, defined as the voltage at which 0.80 x 2P{sub r} max is switched, 2.0V. We also describe an all-alkoxide route to SBT films from which SBT can be crystallized at 550 C.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 2818
- Report Number(s):
- SAND98-2837C; TRN: AH200112%%177
- Resource Relation:
- Conference: Material Research Society Symposium, Boston, MA (US), 12/05/1998; Other Information: PBD: 21 Dec 1998
- Country of Publication:
- United States
- Language:
- English
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