Properties of TaN{sub {ital x}} films as diffusion barriers in the thermally stable Cu/Si contact systems
- Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology, Kitami 090 (Japan)
- Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, Kitami 090 (Japan)
The properties of Ta{sub 2}N and TaN compound films as a diffusion barrier between Cu and Si have been investigated by examining compositional depth profiles obtained by Auger electron spectroscopy. The use of a Ta{sub 2}N barrier is effective for improving the thermal stability of the contact system by raising the silicide formation temperature as compared with the use of a Ta barrier. The contact system of Cu/TaN/Si is fairly stable due to annealing for 1 h even at 750{degree}C. This is interpreted by the stability of the TaN compound, which is chemically inert to Si as well as Cu at this temperature. Eliminating the grain growth of TaN due to annealing is also effective for suppressing the physical diffusion through the barrier. {copyright} {ital 1996 American Vacuum Society}
- OSTI ID:
- 280136
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 14, Issue 2; Other Information: PBD: Mar 1996
- Country of Publication:
- United States
- Language:
- English
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