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Title: Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates

Abstract

The evolution of surface roughness on epitaxial Si films grown at 300{degree}C by ultrahigh vacuum ion-beam sputter deposition onto nominally singular, [100]-, and [110]-miscut Si(001) is inconsistent with conventional scaling and hyperscaling laws for kinetic roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contrary to previous high-temperature growth results, the presence of steps during deposition at 300{degree}C increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughness on vicinal substrates. {copyright} {ital 1996 The American Physical Society.}

Authors:
; ;  [1]
  1. Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
279779
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter
Additional Journal Information:
Journal Volume: 53; Journal Issue: 12; Other Information: PBD: Mar 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; EPITAXY; FILMS; ROUGHNESS; SCALING LAWS; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; SPUTTERED MATERIALS; SURFACE STRUCTURE

Citation Formats

Lee, N, Cahill, D G, and Greene, J E. Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates. United States: N. p., 1996. Web. doi:10.1103/PhysRevB.53.7876.
Lee, N, Cahill, D G, & Greene, J E. Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates. United States. doi:10.1103/PhysRevB.53.7876.
Lee, N, Cahill, D G, and Greene, J E. Fri . "Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates". United States. doi:10.1103/PhysRevB.53.7876.
@article{osti_279779,
title = {Surface roughening during low-temperature Si epitaxial growth on singular vs vicinal Si(001) substrates},
author = {Lee, N and Cahill, D G and Greene, J E},
abstractNote = {The evolution of surface roughness on epitaxial Si films grown at 300{degree}C by ultrahigh vacuum ion-beam sputter deposition onto nominally singular, [100]-, and [110]-miscut Si(001) is inconsistent with conventional scaling and hyperscaling laws for kinetic roughening. Unstable growth leading to the formation of mounds separated by a well-defined length scale is observed on all substrates. Contrary to previous high-temperature growth results, the presence of steps during deposition at 300{degree}C increases the tendency toward unstable growth resulting in a much earlier development of mound structures and larger surface roughness on vicinal substrates. {copyright} {ital 1996 The American Physical Society.}},
doi = {10.1103/PhysRevB.53.7876},
journal = {Physical Review, B: Condensed Matter},
number = 12,
volume = 53,
place = {United States},
year = {1996},
month = {3}
}