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Title: Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy

Abstract

Scanning tunneling microscopy (STM) of laser-irradiated Si(100) surfaces shows that the dimerized outermost layer can be selectively removed by a pulsed Nd:YAG laser with a fluence below the melt threshold. The atoms in the laser-uncovered second layer are close to positions of a bulk terminated (1{times}1) structure, but with a slight pairing, while dimers retain a (2{times}1) configuration in the first layer. The pairing distance and fraction of the remaining dimers decrease with increasing laser exposures. The laser-uncovered layer also remains free of vacancies. {copyright} {ital 1996 The American Physical Society.}

Authors:
; ;  [1]
  1. Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6142 (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory
OSTI Identifier:
279067
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter
Additional Journal Information:
Journal Volume: 53; Journal Issue: 8; Other Information: PBD: Feb 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; RADIATION EFFECTS; CRYSTAL DEFECTS; DIMERS; ETCHING; LASER RADIATION; MICROSCOPY; STRUCTURAL CHEMICAL ANALYSIS; SURFACE CLEANING; STM; SURFACE RECONSTRUCTION

Citation Formats

Xu, J, Overbury, S H, and Wendelken, J F. Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy. United States: N. p., 1996. Web. doi:10.1103/PhysRevB.53.R4245.
Xu, J, Overbury, S H, & Wendelken, J F. Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy. United States. https://doi.org/10.1103/PhysRevB.53.R4245
Xu, J, Overbury, S H, and Wendelken, J F. Thu . "Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy". United States. https://doi.org/10.1103/PhysRevB.53.R4245.
@article{osti_279067,
title = {Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy},
author = {Xu, J and Overbury, S H and Wendelken, J F},
abstractNote = {Scanning tunneling microscopy (STM) of laser-irradiated Si(100) surfaces shows that the dimerized outermost layer can be selectively removed by a pulsed Nd:YAG laser with a fluence below the melt threshold. The atoms in the laser-uncovered second layer are close to positions of a bulk terminated (1{times}1) structure, but with a slight pairing, while dimers retain a (2{times}1) configuration in the first layer. The pairing distance and fraction of the remaining dimers decrease with increasing laser exposures. The laser-uncovered layer also remains free of vacancies. {copyright} {ital 1996 The American Physical Society.}},
doi = {10.1103/PhysRevB.53.R4245},
url = {https://www.osti.gov/biblio/279067}, journal = {Physical Review, B: Condensed Matter},
number = 8,
volume = 53,
place = {United States},
year = {1996},
month = {2}
}