Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy

doi:https://doi.org/10.1103/PhysRevB.53.R4245

Title: Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy

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Abstract

Scanning tunneling microscopy (STM) of laser-irradiated Si(100) surfaces shows that the dimerized outermost layer can be selectively removed by a pulsed Nd:YAG laser with a fluence below the melt threshold. The atoms in the laser-uncovered second layer are close to positions of a bulk terminated (1{times}1) structure, but with a slight pairing, while dimers retain a (2{times}1) configuration in the first layer. The pairing distance and fraction of the remaining dimers decrease with increasing laser exposures. The laser-uncovered layer also remains free of vacancies. {copyright} {ital 1996 The American Physical Society.}

Authors:

Xu, J; Overbury, S H; Wendelken, J F ^[1]

Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6142 (United States)

Publication Date:: 1996-02-01

Research Org.:: Oak Ridge National Laboratory

OSTI Identifier:: 279067

DOE Contract Number:: AC05-84OR21400

Resource Type:: Journal Article

Journal Name:: Physical Review, B: Condensed Matter

Additional Journal Information:: Journal Volume: 53; Journal Issue: 8; Other Information: PBD: Feb 1996

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; SILICON; RADIATION EFFECTS; CRYSTAL DEFECTS; DIMERS; ETCHING; LASER RADIATION; MICROSCOPY; STRUCTURAL CHEMICAL ANALYSIS; SURFACE CLEANING; STM; SURFACE RECONSTRUCTION

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                    Xu, J, Overbury, S H, and Wendelken, J F. Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy.  United States: N. p., 1996. 
        Web.  doi:10.1103/PhysRevB.53.R4245.

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                    Xu, J, Overbury, S H, & Wendelken, J F. Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy.  United States.  https://doi.org/10.1103/PhysRevB.53.R4245

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                    Xu, J, Overbury, S H, and Wendelken, J F. Thu .  
        "Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy".  United States.  https://doi.org/10.1103/PhysRevB.53.R4245.

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@article{osti_279067,

  title        = {Selective laser removal of the dimer layer from Si(100) surfaces revealed by scanning tunneling microscopy},

  author       = {Xu, J and Overbury, S H and Wendelken, J F},

  abstractNote = {Scanning tunneling microscopy (STM) of laser-irradiated Si(100) surfaces shows that the dimerized outermost layer can be selectively removed by a pulsed Nd:YAG laser with a fluence below the melt threshold. The atoms in the laser-uncovered second layer are close to positions of a bulk terminated (1{times}1) structure, but with a slight pairing, while dimers retain a (2{times}1) configuration in the first layer. The pairing distance and fraction of the remaining dimers decrease with increasing laser exposures. The laser-uncovered layer also remains free of vacancies. {copyright} {ital 1996 The American Physical Society.}},

  doi          = {10.1103/PhysRevB.53.R4245},

  url          = {https://www.osti.gov/biblio/279067},
  journal      = {Physical Review, B: Condensed Matter},
number       = 8,

  volume       = 53,

  place        = {United States},

  year         = {1996},

  month        = {2}

}

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