Recent advances in understanding total-dose effects in bipolar transistors
- Univ. of Arizona, Tucson, AZ (United States). Electrical and Computer Engineering Dept.
Gain degradation in irradiated bipolar transistors can be a significant problem, particularly in linear integrated circuits. In many bipolar technologies, the degradation is greater for irradiation at low dose rates than it is for typical laboratory dose rates. Ionizing radiation causes the base current in bipolar transistors to increase, due to the presence of net positive charge in the oxides covering sensitive device areas and increases in surface recombination velocity. Understanding the mechanisms responsible for radiation-induced gain degradation in bipolar transistors is important in developing appropriate hardness assurance methods. This paper reviews recent modeling and experimental work, with the emphasis on low-dose-rate effects. A promising hardness assurance method based on irradiation at elevated temperatures is described.
- OSTI ID:
- 277712
- Report Number(s):
- CONF-9509107-; ISSN 0018-9499; TRN: 96:018150
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 43, Issue 3Pt1; Conference: 3. European symposium on radiation and its effects on components and systems (RADECS 95), Arcachon (France), 18-22 Sep 1995; Other Information: PBD: Jun 1996
- Country of Publication:
- United States
- Language:
- English
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