Fast and slow border traps in MOS devices
- Sandia National Labs., Albuquerque, NM (United States)
Convergent lines of evidence are reviewed which show that near-interfacial oxide traps (border traps) that exchange charge with the Si can strongly affect the performance, radiation response, and long-term reliability of MOS devices. Observable effects of border traps include capacitance-voltage (C-V) hysteresis, enhanced l/f noise, compensation of trapped holes, and increased thermally stimulated current in MOS capacitors. Effects of faster (switching times between {approximately}10{sup {minus}6} s and {approximately}1 s) and slower (switching times greater than {approximately}1 s) border traps have been resolved via a dual-transistor technique. In conjunction with studies of MOS electrical response, electron paramagnetic resonance and spin dependent recombination studies suggest that E{prime} defects (trivalent Si centers in SiO{sub 2} associated with O vacancies) can function as border traps in MOS devices exposed to ionizing radiation or high-field stress. Hydrogen-related centers may also be border traps.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 277711
- Report Number(s):
- CONF-9509107-; ISSN 0018-9499; TRN: 96:018149
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 43, Issue 3Pt1; Conference: 3. European symposium on radiation and its effects on components and systems (RADECS 95), Arcachon (France), 18-22 Sep 1995; Other Information: PBD: Jun 1996
- Country of Publication:
- United States
- Language:
- English
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