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Title: Infra-red microscopy of Cd(Zn)Te radiation detectors revealing their internal electric field structure under bias

Abstract

This paper describes the use of the Pockels electro-optic effect to both visualize and measure the internal electric field present within CdZnTe detectors under normal bias conditions. Use was made of a silicon charge coupled device (CCD), as an image sensor, in conjunction with a 940 nm LED to illuminate a 3x3x5 mm detector crystal with polarized infra-red light. The experiment was arranged so that a {times}40 image of the crystal showing a contour plot of electric field intensity could be generated. Further, more precise E-field measurements, were obtained using a 1.2{micro}m laser diode (LD) and a germanium photodiode detector. Together these experiments indicate substantially nonuniform electric fields within the detector crystals used.

Authors:
; ;  [1]
  1. Univ. of Surrey, Guildford (United Kingdom). Dept. of Physics
Publication Date:
OSTI Identifier:
277705
Report Number(s):
CONF-951073-
Journal ID: IETNAE; ISSN 0018-9499; TRN: 96:018143
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 43; Journal Issue: 3Pt2; Conference: IEEE nuclear science symposium and medical imaging conference, San Francisco, CA (United States), 21-28 Oct 1995; Other Information: PBD: Jun 1996
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; SEMICONDUCTOR DETECTORS; ELECTRIC FIELDS; MICROSCOPY; IONIZING RADIATIONS; CADMIUM TELLURIDES; ZINC TELLURIDES; CHARGE-COUPLED DEVICES; LIGHT EMITTING DIODES; ELECTRO-OPTICAL EFFECTS

Citation Formats

De Antonis, P, Morton, E J, and Podd, F J.W. Infra-red microscopy of Cd(Zn)Te radiation detectors revealing their internal electric field structure under bias. United States: N. p., 1996. Web. doi:10.1109/23.507089.
De Antonis, P, Morton, E J, & Podd, F J.W. Infra-red microscopy of Cd(Zn)Te radiation detectors revealing their internal electric field structure under bias. United States. https://doi.org/10.1109/23.507089
De Antonis, P, Morton, E J, and Podd, F J.W. Sat . "Infra-red microscopy of Cd(Zn)Te radiation detectors revealing their internal electric field structure under bias". United States. https://doi.org/10.1109/23.507089.
@article{osti_277705,
title = {Infra-red microscopy of Cd(Zn)Te radiation detectors revealing their internal electric field structure under bias},
author = {De Antonis, P and Morton, E J and Podd, F J.W.},
abstractNote = {This paper describes the use of the Pockels electro-optic effect to both visualize and measure the internal electric field present within CdZnTe detectors under normal bias conditions. Use was made of a silicon charge coupled device (CCD), as an image sensor, in conjunction with a 940 nm LED to illuminate a 3x3x5 mm detector crystal with polarized infra-red light. The experiment was arranged so that a {times}40 image of the crystal showing a contour plot of electric field intensity could be generated. Further, more precise E-field measurements, were obtained using a 1.2{micro}m laser diode (LD) and a germanium photodiode detector. Together these experiments indicate substantially nonuniform electric fields within the detector crystals used.},
doi = {10.1109/23.507089},
url = {https://www.osti.gov/biblio/277705}, journal = {IEEE Transactions on Nuclear Science},
number = 3Pt2,
volume = 43,
place = {United States},
year = {1996},
month = {6}
}