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Title: Development and characterization of zone melt growth GaAs for gamma-ray detectors

Abstract

GaAs is a potentially attractive material for room temperature x-ray and {gamma}-ray spectrometers. To date, the only high resolution GaAs devices were produced by epitaxial growth. The usefulness of detectors made from bulk grown semi-insulating (SI) GaAs has been limited by low charge collection efficiency caused, it is believed, by the high density of EL2 deep donor defects. Vertical zone melt (VZM) growth of GaAs has recently been developed at the Naval Research Laboratory. Zone refining and zone leveling techniques were used with VZM to reduce the level of impurities and the EL2 defects in bulk SI-GaAs. Schottky barrier and PIN diodes have been fabricated from the newly grown material. These devices were characterized using {alpha} particles and {gamma}-rays. In this paper, the measurements and analysis of the first VZM GaAs devices are presented and compared with commercially available GaAs. The intent is to test the hypothesis that high purity, low defect GaAs material growth could lead to improved radiation detectors.

Authors:
; ; ; ; ;  [1];  [2]
  1. Naval Research Lab., Washington, DC (United States)
  2. Kentucky State Univ., Frankfort, KY (United States)
Publication Date:
OSTI Identifier:
277673
Report Number(s):
CONF-951073-
Journal ID: IETNAE; ISSN 0018-9499; TRN: 96:018126
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 43; Journal Issue: 3Pt2; Conference: IEEE nuclear science symposium and medical imaging conference, San Francisco, CA (United States), 21-28 Oct 1995; Other Information: PBD: Jun 1996
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; 36 MATERIALS SCIENCE; GAMMA SPECTROMETERS; MATERIALS; X-RAY SPECTROMETERS; GALLIUM ARSENIDES; CRYSTAL GROWTH METHODS; AMBIENT TEMPERATURE; CRYSTAL DEFECTS; SEMICONDUCTOR DIODES; ALPHA PARTICLES; SEMICONDUCTOR DETECTORS

Citation Formats

King, S E, Dietrich, H B, Henry, R L, Katzer, D S, Moore, W J, Phillips, G W, and Mania, R C. Development and characterization of zone melt growth GaAs for gamma-ray detectors. United States: N. p., 1996. Web. doi:10.1109/23.507069.
King, S E, Dietrich, H B, Henry, R L, Katzer, D S, Moore, W J, Phillips, G W, & Mania, R C. Development and characterization of zone melt growth GaAs for gamma-ray detectors. United States. https://doi.org/10.1109/23.507069
King, S E, Dietrich, H B, Henry, R L, Katzer, D S, Moore, W J, Phillips, G W, and Mania, R C. Sat . "Development and characterization of zone melt growth GaAs for gamma-ray detectors". United States. https://doi.org/10.1109/23.507069.
@article{osti_277673,
title = {Development and characterization of zone melt growth GaAs for gamma-ray detectors},
author = {King, S E and Dietrich, H B and Henry, R L and Katzer, D S and Moore, W J and Phillips, G W and Mania, R C},
abstractNote = {GaAs is a potentially attractive material for room temperature x-ray and {gamma}-ray spectrometers. To date, the only high resolution GaAs devices were produced by epitaxial growth. The usefulness of detectors made from bulk grown semi-insulating (SI) GaAs has been limited by low charge collection efficiency caused, it is believed, by the high density of EL2 deep donor defects. Vertical zone melt (VZM) growth of GaAs has recently been developed at the Naval Research Laboratory. Zone refining and zone leveling techniques were used with VZM to reduce the level of impurities and the EL2 defects in bulk SI-GaAs. Schottky barrier and PIN diodes have been fabricated from the newly grown material. These devices were characterized using {alpha} particles and {gamma}-rays. In this paper, the measurements and analysis of the first VZM GaAs devices are presented and compared with commercially available GaAs. The intent is to test the hypothesis that high purity, low defect GaAs material growth could lead to improved radiation detectors.},
doi = {10.1109/23.507069},
url = {https://www.osti.gov/biblio/277673}, journal = {IEEE Transactions on Nuclear Science},
number = 3Pt2,
volume = 43,
place = {United States},
year = {1996},
month = {6}
}