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Title: Comparison of various GaAs materials used for gamma-ray pulses characterization

Abstract

Gallium arsenide resistive photoconductors are widely used for the characterization of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. The authors have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detectors characteristics : response time and sensitivity, were tested both before and after pre-irradiation with fission neutron as integrated doses in the range 5 {times} 10{sup 14} to 1 {times} 10{sup 16} neutrons/cm{sup 2}. The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1 {times} 10{sup 15} neutrons/cm{sup 2}.

Authors:
; ;  [1]; ;  [2]
  1. DEIN/SPE-CEA/Saclay, Gif-sur-Yvette (France)
  2. Centre d`Etudes Nucleaires, Bruyeres-le-Chatel (France)
Publication Date:
OSTI Identifier:
277672
Report Number(s):
CONF-951073-
Journal ID: IETNAE; ISSN 0018-9499; TRN: 96:018125
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 43; Journal Issue: 3Pt2; Conference: IEEE nuclear science symposium and medical imaging conference, San Francisco, CA (United States), 21-28 Oct 1995; Other Information: PBD: Jun 1996
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; 36 MATERIALS SCIENCE; PHOTOCONDUCTORS; PHYSICAL RADIATION EFFECTS; GALLIUM ARSENIDES; EXPERIMENTAL DATA; TIME DEPENDENCE; PHYSICAL PROPERTIES; GAMMA DETECTION; RESPONSE FUNCTIONS; RADIATION DOSES; CARRIER LIFETIME; RADIATION DETECTORS

Citation Formats

Foulon, F, Bergonzo, P, Pochet, T, Brullot, B, and Rubbelynck, C. Comparison of various GaAs materials used for gamma-ray pulses characterization. United States: N. p., 1996. Web. doi:10.1109/23.507068.
Foulon, F, Bergonzo, P, Pochet, T, Brullot, B, & Rubbelynck, C. Comparison of various GaAs materials used for gamma-ray pulses characterization. United States. https://doi.org/10.1109/23.507068
Foulon, F, Bergonzo, P, Pochet, T, Brullot, B, and Rubbelynck, C. Sat . "Comparison of various GaAs materials used for gamma-ray pulses characterization". United States. https://doi.org/10.1109/23.507068.
@article{osti_277672,
title = {Comparison of various GaAs materials used for gamma-ray pulses characterization},
author = {Foulon, F and Bergonzo, P and Pochet, T and Brullot, B and Rubbelynck, C},
abstractNote = {Gallium arsenide resistive photoconductors are widely used for the characterization of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. The authors have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detectors characteristics : response time and sensitivity, were tested both before and after pre-irradiation with fission neutron as integrated doses in the range 5 {times} 10{sup 14} to 1 {times} 10{sup 16} neutrons/cm{sup 2}. The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1 {times} 10{sup 15} neutrons/cm{sup 2}.},
doi = {10.1109/23.507068},
url = {https://www.osti.gov/biblio/277672}, journal = {IEEE Transactions on Nuclear Science},
number = 3Pt2,
volume = 43,
place = {United States},
year = {1996},
month = {6}
}