First observation of thermal runaway in the radiation damaged silicon detector

Journal Article · Sat Jun 01 00:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.506663· OSTI ID:277638

Kohriki, Takashi; Kondo, Takahiko; Iwasaki, Hiroyuki; Terada, Susumu; Unno, Yoshinobu ^[1]; Ohsugi, Takashi ^[2]

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1. National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan)
2. Hiroshima Univ., Higashi-Hiroshima (Japan). Physics Dept.

Silicon microstrip detectors are expected to work in high radiation environments like LHC. Effects due to radiation of the order of 10{sup 13}--10{sup 14} particles/cm{sup 2}/year are mainly an increase of bulk leakage current, an increase of the depletion voltage, an effective inversion of bulk type from n to p, and a decrease of charge collection efficiency. Here, a silicon microstrip detector irradiated with a fluence of 4.2 {times} 10{sup 13} protons/cm{sup 2} was demonstrated to give rise to detector thermal runaway. The temperature and voltage dependence can be fairly well reproduced by a finite element thermal simulation with temperature dependent bulk leakage current.

• OSTI ID: 277638
• Report Number(s): CONF-951073-; ISSN 0018-9499; TRN: 96:018091
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 43, Issue 3Pt2; Conference: IEEE nuclear science symposium and medical imaging conference, San Francisco, CA (United States), 21-28 Oct 1995; Other Information: PBD: Jun 1996
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
SI SEMICONDUCTOR DETECTORS
PHYSICAL RADIATION EFFECTS
CERN LHC
TEMPERATURE DEPENDENCE
ELECTRIC POTENTIAL
FINITE ELEMENT METHOD
EXPERIMENTAL DATA