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Title: Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}

Abstract

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

Inventors:
;
Publication Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
27736
Patent Number(s):
US RE 31,968/E/
Application Number:
PAN: 6-620,637
Assignee:
Boeing Co., Seattle, WA (United States)
DOE Contract Number:  
EG-77-C-01-4042
Resource Type:
Patent
Resource Relation:
Other Information: DN: Reissue of US Pat. No. 4,335,266, which was issued Jun. 15, 1982; PBD: 13 Aug 1985
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SOLAR CELLS; DESIGN; FABRICATION; ENERGY EFFICIENCY; VACUUM COATING; P-N JUNCTIONS; N-TYPE CONDUCTORS

Citation Formats

Mickelsen, R A, and Chen, W S. Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}. United States: N. p., 1985. Web.
Mickelsen, R A, & Chen, W S. Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}. United States.
Mickelsen, R A, and Chen, W S. Tue . "Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}". United States.
@article{osti_27736,
title = {Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}},
author = {Mickelsen, R A and Chen, W S},
abstractNote = {An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {8}
}