In-situ investigation of ion implantation effects of radiation- induced segregation in Ni-Al alloys
- Argonne National Lab., IL (United States)
- Illinois Univ., Urbana, IL (United States). Dept. of Nuclear Engineering
In-situ experiments using the HVEM/Tandem accelerator at ANL were performed to determine effects of 400-keV Zr{sup +} and 75-keV Ne{sup +} implantation on electron radiation-induced segregation (RIS) in Ni- 9at.%Al at 550 and 450 C, respectively. Alteration of RIS kinetics by Ne implantation was studied at two different doses. A highly focused 900-keV electron beam, which produces a radial defect flux away from the beam center, was used to induce segregation of Al atoms in the opposite direction via the inverse Kirkendall effect. Within the irradiated zone, Al enrichment drives the formation of {gamma}`- Ni{sub 3}Al precipitates, and the radial segregation rate of Al was monitored by measuring the growth of the precipitate zone.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 268360
- Report Number(s):
- ANL/MSD/CP-90107; CONF-960860-18; ON: DE96012692; TRN: 96:017007
- Resource Relation:
- Conference: 54. annual meeting of the Microscopy Society of America (MSA): microscopy and microanalysis, Minneapolis, MN (United States), 11-15 Aug 1996; Other Information: PBD: May 1996
- Country of Publication:
- United States
- Language:
- English
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