Molecular and polymer precursor routes to manganese-doped zinc orthosilicate phosphors
- Univ. of California, Berkeley, CA (United States)
- Univ. of California, San Diego, CA (United States)
The zinc alkoxy (siloxy)complex [C@Zn[OSi(O{sup t}Bu){sub 3}]{sub 2}]C{sub 2} has been prepared and studied as a molecular precursor to zinc orthosilicate, Zn{sub 2}SiO{sub 4}. This complex, prepared by reaction of ZnMe{sub 2} with HOSi(O{sup t}Bu){sub 3}, has been characterized by X-ray crystallography as a dimer with two four-coordinate zinc centers. This polymer undergoes a very clean ceramic conversion over 150-250{degree}C to give the theoretical yield of carbon-free Zn{sub 2}SiO{sub 4}.SiO{sub 2}. The pyrolytic elimination products consists of water, tert-butyl alcohol, and isobutene. X-ray diffraction studies on the ceramic products show that Zn{sub 2}SiO{sub 4} is the only zinc-containing, crystalline product formed. Thus this precursor approach appears to offer an advantage over sol-gel processes, which tend to produce ZnO as a side product. Hydrocarbon solutions of the polymer were used to fabricate high-quality thin films. Via pyrolysis of [ZnOSi(O{sup t}Bu){sub 2}O]{sub n}/[Mn(CH{sub 2}SiMe{sub 3}){sub 2}]{sub m} mixtures, manganese-doped Zn{sub 2}SiO{sub 4}.SiO{sub 2} materials were synthesized. These materials exhibit two photoluminescence emission bands centered at 535 (major) and 605 nm (minor). The intensity of the green emission at 535 nm, which is responsible for the cathodoluminescence properties of Zn{sub 2}SiO{sub 4}:Mn phosphors, is highly dependent on the level of manganese doping. 26 refs., 12 figs., 4 tabs.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 263144
- Journal Information:
- Journal of the American Chemical Society, Vol. 118, Issue 14; Other Information: PBD: 10 Apr 1996
- Country of Publication:
- United States
- Language:
- English
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