High temperature electron cyclotron resonance etching of GaN, InN, and AlN
Abstract
Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl{sub 2}/H{sub 2}/CH{sub 4}/Ar and Cl{sub 2}/H{sub 2}/Ar plasmas. Using Cl{sub 2}/H{sub 2}/CH{sub 4}/Ar plasma chemistry, GaN etch rates remain relatively constant from 30 to 125 {degree}C and then increase to a maximum of 2340 A/min at 170 {degree}C. The InN etch rate decreases monotonically from 30 to 150 {degree}C and then rapidly increases to a maximum of 2300 A/min at 170 {degree}C. This is the highest etch rate reported for this material. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 A/min at 30 {degree}C. When CH{sub 4} is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III--V nitrides remains unchanged after exposure to the Cl{sub 2}/H{sub 2}/CH{sub 4}/Ar plasma over the temperatures studied.
- Authors:
-
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Publication Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 26029
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 66; Journal Issue: 14; Other Information: PBD: 3 Apr 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ETCHING; GALLIUM NITRIDES; INDIUM NITRIDES; ECR HEATING; PLASMA; DAMAGE; SURFACE TREATMENTS
Citation Formats
Shul, R J, Kilcoyne, S P, Hagerott Crawford, M, Parmeter, J E, Vartuli, C B, Abernathy, C R, and Pearton, S J. High temperature electron cyclotron resonance etching of GaN, InN, and AlN. United States: N. p., 1995.
Web. doi:10.1063/1.113359.
Shul, R J, Kilcoyne, S P, Hagerott Crawford, M, Parmeter, J E, Vartuli, C B, Abernathy, C R, & Pearton, S J. High temperature electron cyclotron resonance etching of GaN, InN, and AlN. United States. https://doi.org/10.1063/1.113359
Shul, R J, Kilcoyne, S P, Hagerott Crawford, M, Parmeter, J E, Vartuli, C B, Abernathy, C R, and Pearton, S J. 1995.
"High temperature electron cyclotron resonance etching of GaN, InN, and AlN". United States. https://doi.org/10.1063/1.113359.
@article{osti_26029,
title = {High temperature electron cyclotron resonance etching of GaN, InN, and AlN},
author = {Shul, R J and Kilcoyne, S P and Hagerott Crawford, M and Parmeter, J E and Vartuli, C B and Abernathy, C R and Pearton, S J},
abstractNote = {Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl{sub 2}/H{sub 2}/CH{sub 4}/Ar and Cl{sub 2}/H{sub 2}/Ar plasmas. Using Cl{sub 2}/H{sub 2}/CH{sub 4}/Ar plasma chemistry, GaN etch rates remain relatively constant from 30 to 125 {degree}C and then increase to a maximum of 2340 A/min at 170 {degree}C. The InN etch rate decreases monotonically from 30 to 150 {degree}C and then rapidly increases to a maximum of 2300 A/min at 170 {degree}C. This is the highest etch rate reported for this material. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 A/min at 30 {degree}C. When CH{sub 4} is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III--V nitrides remains unchanged after exposure to the Cl{sub 2}/H{sub 2}/CH{sub 4}/Ar plasma over the temperatures studied.},
doi = {10.1063/1.113359},
url = {https://www.osti.gov/biblio/26029},
journal = {Applied Physics Letters},
number = 14,
volume = 66,
place = {United States},
year = {Mon Apr 03 00:00:00 EDT 1995},
month = {Mon Apr 03 00:00:00 EDT 1995}
}