Investigation of charge transport and electromagnetic effects in advanced microelectronics and optoelectronics
- and others
This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The next generation of electronic microchips will utilize components with sub-micron feature size and optoelectronic devices with picosecond response time. Fundamental understanding of the device performance can only be obtained through first principles physics modeling of charge transport and electromagnetic effects in realistic geometries with material interfaces and dispersive properties. We have developed a general model incorporating important physics such as charge transport processes in materials with multilevel band structures and electromagnetic effects to simulate device characteristics. Accurate treatment of material interfaces and boundaries is included. The Monte Carlo charge transport is coupled self-consistently to Maxwell`s equations to accurately model scattering processes in the presence of an externally biased potential. This detailed multidimensional simulation capability is compared with and verified by experimental data, and could become an industrial standard for benchmarking and improving the {open_quotes}reduced model{close_quotes} codes used for semiconductor design. Specific tasks are the extension of existing capabilities in particle-in-cell plasma simulation technique and Monte Carlo charge transport to study the physics of charged particle dynamics in realistic microelectronic devices, such as bipolar semiconductors, heterojunction transistors, and optoelectronic switches. Our approach has been based on the coupled particle-in-cell/Monte Carlo technique, which can simultaneously treat both electromagnetic wave propagation and charged-particle transport.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 258141
- Report Number(s):
- LA-UR-96-2260; ON: DE96012856; TRN: 96:004093
- Resource Relation:
- Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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