Enhanced deposition rate of lithium phosphorus oxynitride thin films by sputtering of Li{sub 3}PO{sub 4} in N{sub 2}{endash}He gas mixtures

Journal Article · Mon Jan 01 00:00:00 EST 1996 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.579876· OSTI ID:256746

Bates, J B; Yu, X ^[1]

---

1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6030 (United States)

The addition of He to N{sub 2} increases significantly the deposition rate of lithium phosphorus oxynitride thin films by radio frequency magnetron sputtering of Li{sub 3}PO{sub 4} targets. From the correlation with the optical emission intensity, the enhanced rate is attributed to an increase in the N{sup +}{sub 2} ion concentration in the plasma due to Penning ionization. The ionic conductivity of the films deposited at higher rates in He+20{percent} N{sub 2} compares favorably with that of films deposited at lower rates in pure N{sub 2}. {copyright} {ital 1996 American Vacuum Society}

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 256746
• Journal Information: Journal of Vacuum Science and Technology, A, Vol. 14, Issue 1; Other Information: PBD: Jan 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
LITHIUM COMPOUNDS
DEPOSITION
NITRIDES
OXIDES
PHOSPHORUS COMPOUNDS
HELIUM
HIGH-FREQUENCY DISCHARGES
HYDROGEN
IONIC CONDUCTIVITY
SPUTTERING
THIN FILMS