Synthesis and evaluation of thermoelectric multilayer films

Conference · Thu Mar 21 00:00:00 EST 1996

OSTI ID:250564

Wagner, A V; Foreman, R J; Summers, L J; Barbee, Jr, T W; Farmer, J C

The deposition of compositionally modulated (Bi{sub 1-x}Sb{sub x}){sub 2}(Te{sub 1-y}Se{sub y}){sub 3} thermoelectric multilayer films by magnetron sputtering has been demonstrated. Structures with a period of 140{Angstrom} are shown to be stable to interdiffusion at the high deposition temperatures necessary for growth of single layer crystalline films with ZT {gt} 0.5. These multilayers are of the correct dimension to exhibit the electronic properties of quantum well structures. Furthermore it is shown that the Seebeck coefficient of the films is not degraded by the presence of this multilayer structure. It may be possible to synthesize a multilayer thermoelectric material with enhanced ZT by maximizing the barrier height through optimization of the composition of the barrier.

• Research Organization: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 250564
• Report Number(s): UCRL-JC-123753; CONF-960334-4; ON: DE96011625
• Resource Relation: Conference: 15. International conference on Thermoelectrics (ICT 96), Pasadena, CA (United States), 26-29 Mar 1996; Other Information: PBD: 21 Mar 1996
• Country of Publication: United States
• Language: English

Related Subjects

30 DIRECT ENERGY CONVERSION
36 MATERIALS SCIENCE
THERMOELECTRIC MATERIALS
DEPOSITION
BISMUTH ALLOYS
THERMOELECTRIC PROPERTIES
TELLURIUM ALLOYS
SELENIUM ALLOYS
ANTIMONIDES
SELENIDES
SEEBECK EFFECT
MAGNETRONS
SPUTTERING
SCANNING ELECTRON MICROSCOPY
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
INTERMETALLIC COMPOUNDS
MICROSTRUCTURE