Temperature formation of structural defects in the interface of GaAs Schottky barrier

Journal Article · Mon Mar 01 00:00:00 EST 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586699· OSTI ID:249822

Popov, A; Yakimova, R ^[1]

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1. Sofia Univ. (Bulgaria)

Possible defects originating in the interface of GaAs Schottky barriers have been considered. Three types of imperfections, such as clusters, metal microphases, and extended dislocation defects, have been recognized after intentional thermal treatment of the samples. It has been shown that those defects may affect strongly the Schottky barrier height, and thus, the idea of an effective work function has been supported. By deep-level transient spectroscopy spectra simulation, characteristic broadening and shifting of the experimental spectra have been explained to be due to dislocation defects. A model has been proposed of defect formation which may act as a possible limit of metal-insulator semiconductor field effect transistor operation at high temperatures. 6 refs., 4 figs.

• OSTI ID: 249822
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 2; Other Information: PBD: Mar-Apr 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
GALLIUM ARSENIDES
CRYSTAL DEFECTS
SPECTRA
INTERFACES
DISLOCATIONS
FIELD EFFECT TRANSISTORS
SCHOTTKY BARRIER DIODES