Advanced Functional Materials ZnO@ZIF-8 Heterostructures for Neuromorphic Synaptic Devices

Kolleboyina, Jayaramulu; Yeom, Chaemin; Lee, Hyeonseung; Gobbilla, Sai Kumar; Eadi, Sunil Babu; Thallapally, Praveen K.; Kwon, Hyukmin; Fischer, Roland; Lee, Hi-Deok

doi:10.1016/j.xcrp.2024.102219

Advanced Functional Materials ZnO@ZIF-8 Heterostructures for Neuromorphic Synaptic Devices

Journal Article · 16 October 2024 · Cell Reports Physical Science

DOI:https://doi.org/10.1016/j.xcrp.2024.102219· OSTI ID:2477998

Kolleboyina, Jayaramulu ^[1]; Yeom, Chaemin ^[2]; Lee, Hyeonseung ^[2]; Gobbilla, Sai Kumar ^[1]; Eadi, Sunil Babu ^[2]; ^[3]; Kwon, Hyukmin ^[4]; Fischer, Roland ^[5]; Lee, Hi-Deok ^[2]

Indian Institute of Technology Jammu, Jammu and Kashmir
Chungnam National University
BATTELLE (PACIFIC NW LAB)
Semiconductor Convergence Campus of Korea Polytechnic college
University of Miunich

Metal-Organic Frameworks have shown great promise for memristive synaptic devices because of their adaptable electrical properties and inherent porosity, which help in efficient ion transport and storage of functional molecules. However, the limited conductivity and sensitivity to moisture associated with most MOF materials hinder their use in electronic applications. In this study, MOFs derived from metabolites have been synthesized, using ZnO as a self-sacrificial metallic source to grow Zeolitic Imidazolate Framework-8 (ZIF-8), forming ZnO@ZIF-8 heteronanostructures for neuromorphic applications. These hybrids ZnO@ZIF-8 act as promising candidates for advanced electronic applications. Through systematic investigations, including a comparison of ZnO@ZIF-8 bilayer devices with ZnO single-layer counterparts, a significant discovery emerged. The bilayer synaptic devices outperformed their single layer counterparts in electrical characteristics, as evidenced by Current-Voltage curve analysis and Long-Term Potentiation/Long Term Depression (LTP/LTD) measurements. Additionally, the ZnO layer thickness (10, 30, 50 nm) has been emphasized and the effects of annealing at 300°C in a vacuum were carefully studied for Neuromorphic Synaptic Devices. Remarkably, the 10 nm ZnO layer exhibited the lowest set voltage and a consistent On/Off ratio. This work marks a significant advancement in understanding bilayer synaptic devices, highlighting the crucial role of ZIF-8 in shaping the future of neuromorphic systems

Research Organization:: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC05-76RL01830

OSTI ID:: 2477998

Report Number(s):: PNNL-SA-196286

Journal Information:: Cell Reports Physical Science, Journal Name: Cell Reports Physical Science Journal Issue: 10 Vol. 5

Country of Publication:: United States

Language:: English

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