Relaxation processes in semiinsulating CdTe(Cl)

Journal Article · Sun Oct 01 00:00:00 EDT 1995 · Inorganic Materials

OSTI ID:244236

Parfenyuk, O A; Ilashchuk, M I; Savitskii, A V ^[1]

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1. Fed`kovich State Univ., Chernovtsy (Ukraine)

Impurity compensation in CdTe doped with chlorine is usually attributed to the formation of stable associates between donors (Cl{sub Te}) and cadmium vacancies (V{sub cd}), which reduces concentration of cadmium vacancies, a dominant type of intrinsic defect in CdTe. Quantitative analysis of impurities present in high-resistivity crystals of CdTe(Cl) showed that uncontrolled impurities, especially copper, also play a part in compensation processes. Interaction between copper atoms (CU{sub Cd}) and intrinsic defects (V{sub cd}) is believed to be responsible for relaxation processes typical of undoped CdTe. In this work, we studied reversible changes in the equilibrium properties of semiinsulating CdTe(Cl). The physical and electrical properties are described.

• OSTI ID: 244236
• Journal Information: Inorganic Materials, Vol. 31, Issue 10; Other Information: PBD: Oct 1995; TN: Translated from Neorganicheskie Materialy; 31: No. 10, 1325-1327(1995)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
ELECTRICAL PROPERTIES
CHLORINE COMPOUNDS
DOPED MATERIALS
VACANCIES
RELAXATION
PHYSICAL PROPERTIES
TEMPERATURE DEPENDENCE
HOLE MOBILITY
ARRHENIUS EQUATION
CRYSTAL LATTICES