New potentialities for x-ray diffraction analysis in assessing structural perfection of III-V and II-VI crystalline compounds
- Fed`kovich State Univ., Chernovtsy (Ukraine)
The practical importance of II-VI and III-V single crystals is ever increasing. However, utilization of these materials in radically new microelectronic devices requires high-quality crystals with definite electrical properties. Therefore, further improvement of known techniques as well as the search for novel ways of growing perfect crystals and preparing high-quality surfaces are among the major concerns of semiconductor materials research. In attacking these problems, wide use is made of X-ray diffraction analysis, which offers highly informative, nondestructive techniques for assessing crystal perfection. In this work, we demonstrate the potentialities of oblique-asymmetric reflection geometry in both X-ray topographic and double-crystal configurations for studying structural changes in surface layers of CdTe and InSb single crystals.
- OSTI ID:
- 244226
- Journal Information:
- Inorganic Materials, Vol. 31, Issue 10; Other Information: PBD: Oct 1995; TN: Translated from Neorganicheskie Materialy; 31: No. 10,1268-127(1995)
- Country of Publication:
- United States
- Language:
- English
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