Measurement of linear dimensions of submicron structures with a scanning electron microscope
A scanning electron microscope, operating in conditions of secondary slow-electron collection, was used to measure the dimensions of raised rectangular structures in the form of 90-500 nm slit-like groves in silicon. The average measurement error was 0.5-1 %.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 244140
- Journal Information:
- Measurement Techniques, Vol. 38, Issue 4; Other Information: PBD: Sep 1995; TN: Translated from Izmeritel`naya Tekhnika; No. 4, 23-25(Apr 1995)
- Country of Publication:
- United States
- Language:
- English
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