Coexistence and Interplay of Two Ferroelectric Mechanisms in Zn1-xMgxO

Yang, Jonghee; Ievlev, Anton V.; Morozovska, Anna N.; Eliseev, Eugene A.; Poplawsky, Jonathan D.; Goodling, Devin; Spurling, Robert Jackson; Maria, Jon‐Paul; Kalinin, Sergei V.; Liu, Yongtao

doi:10.1002/adma.202404925

Coexistence and Interplay of Two Ferroelectric Mechanisms in Zn_1-xMg_xO

Journal Article · Thu Aug 08 00:00:00 EDT 2024 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202404925· OSTI ID:2438931

Yang, Jonghee ^[1]; ^[2]; Morozovska, Anna N. ^[3]; Eliseev, Eugene A. ^[3]; ^[2]; Goodling, Devin ^[4]; Spurling, Robert Jackson ^[4]; Maria, Jon‐Paul ^[4]; Kalinin, Sergei V. ^[5]; ^[2]

Univ. of Tennessee, Knoxville, TN (United States); Yonsei Univ., Seoul (Korea, Republic of)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine)
Pennsylvania State Univ., University Park, PA (United States)
Univ. of Tennessee, Knoxville, TN (United States)

Abstract Ferroelectric materials promise exceptional attributes including low power dissipation, fast operational speeds, enhanced endurance, and superior retention to revolutionize information technology. However, the practical application of ferroelectric‐semiconductor memory devices has been significantly challenged by the incompatibility of traditional perovskite oxide ferroelectrics with metal‐oxide‐semiconductor technology. Recent discoveries of ferroelectricity in binary oxides such as Zn _1‐x Mg _x O and Hf _1‐x Zr _x O have been a focal point of research in ferroelectric information technology. This work investigates the ferroelectric properties of Zn _1‐x Mg _x O utilizing automated band excitation piezoresponse force microscopy. This findings reveal the coexistence of two ferroelectric subsystems within Zn _1‐x Mg _x O. A “fringing‐ridge mechanism” of polarization switching is proposed that is characterized by initial lateral expansion of nucleation without significant propagation in depth, contradicting the conventional domain growth process observed in ferroelectrics. This unique polarization dynamics in Zn _1‐x Mg _x O suggests a new understanding of ferroelectric behavior, contributing to both the fundamental science of ferroelectrics and their application in information technology.

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This content will become publicly available on Fri Aug 08 00:00:00 EDT 2025

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; SC0021118

OSTI ID:: 2438931

Alternate ID(s):: OSTI ID: 2427425; OSTI ID: 2507334

Journal Information:: Advanced Materials, Vol. 36, Issue 39; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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