Low-Temperature Annealing of Nanoscale Defects in Polycrystalline Graphite

Liu, Gongyuan; Oh, Hajin; Rahman, Md Hafijur; Du, Jing; Windes, William; Haque, Aman

doi:10.3390/c10030076

Low-Temperature Annealing of Nanoscale Defects in Polycrystalline Graphite

Journal Article · Mon Aug 26 00:00:00 EDT 2024 · C

DOI:https://doi.org/10.3390/c10030076· OSTI ID:2437818

Liu, Gongyuan; Oh, Hajin; Rahman, Md Hafijur; Du, Jing; Windes, William;

Polycrystalline graphite contains multi-scale defects, which are difficult to anneal thermally because of the extremely high temperatures involved in the manufacturing process. In this study, we demonstrate annealing of nuclear graphite NBG-18 at temperatures below 28 °C, exploiting the electron wind force, a non-thermal stimulus. High current density pulses were passed through the specimens with a very low-duty cycle so that the electron momentum could mobilize the defects without heating the specimen. The effectiveness of this technique is presented with a significant decrease in electrical resistivity, defect counts from X-ray computed tomography, Raman spectroscopy, and nanoindentation-based mechanical characterization. Such multi-modal evidence highlights the feasibility of nanoscale defect control at temperatures about two orders of magnitude below the graphitization temperature.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: NE0009129

OSTI ID:: 2437818

Journal Information:: C, Journal Name: C Vol. 10 Journal Issue: 3; ISSN 2311-5629

Publisher:: MDPI AGCopyright Statement

Country of Publication:: Switzerland

Language:: English

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