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Oxide Decomposition and Sn Surface Segregation on Core/Shell Ge/GeSn Nanowires

Journal Article · · ACS Applied Electronic Materials
 [1];  [1];  [1];  [2];  [3];  [3];  [1]
  1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
  2. Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
  3. ThermoFisher Scientific, Hillsboro, Oregon 97124, United States

Not provided.

Research Organization:
Oak Ridge Institute for Science and Education (ORISE), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
SC0014664
OSTI ID:
2425756
Journal Information:
ACS Applied Electronic Materials, Journal Name: ACS Applied Electronic Materials Journal Issue: 11 Vol. 4; ISSN 2637-6113
Publisher:
ACS Publications
Country of Publication:
United States
Language:
English

References (52)

Academic and industry research progress in germanium nanodevices journal November 2011
Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces journal April 2000
Experimental investigation on oxidation kinetics of germanium by ozone journal December 2016
Thermal Stability and Surface Passivation of Ge Nanowires Coated by Epitaxial SiGe Shells journal February 2012
Core-Shell Germanium/Germanium–Tin Nanowires Exhibiting Room-Temperature Direct- and Indirect-Gap Photoluminescence journal November 2016
Wetting Layer: The Key Player in Plasma-Assisted Silicon Nanowire Growth Mediated by Tin journal August 2013
Oxidation of Sn overlayers and the structure and stability of Sn oxide films on Pd(111) journal August 1998
Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate journal June 2015
The thermal stability of epitaxial GeSn layers journal July 2018
Practical guides for x-ray photoelectron spectroscopy (XPS): Interpreting the carbon 1s spectrum journal January 2021
Thermal stability of germanium-tin (GeSn) fins journal December 2017
X-ray photoelectron spectroscopic chemical state quantification of mixed nickel metal, oxide and hydroxide systems journal April 2009
Kinetic study of GeO disproportionation into a GeO2/Ge system using x-ray photoelectron spectroscopy journal August 2012
Vacancy complexes in nonequilibrium germanium-tin semiconductors journal June 2019
Photoemission studies of passivation of germanium nanowires journal December 2005
Mobility Behavior of Ge1-xSnxLayers Grown on Silicon-on-Insulator Substrates journal April 2010
Germanium–tin interdiffusion in strained Ge/GeSn multiple-quantum-well structure journal May 2016
Behavior of Sn atoms in GeSn thin films during thermal annealing:Ex-situandin-situobservations journal December 2016
Deuterium in germanium: Interaction with point defects journal March 1984
Impact of ex-situ annealing on strain and composition of MBE grown GeSn journal September 2020
Kinetics of the transformation of germanium oxide journal January 1963
Measurement of rapid mass transport along individual dislocations in aluminum journal April 1971
Formation and stability of germanium oxide induced by atomic oxygen exposure journal August 2006
Ge Self-Diffusion in Epitaxial Si 1 − x Ge x Layers journal August 2001
Defect-free Stranski-Krastanov growth of strained Si1-xGex layers on Si journal September 1994
Stability and evolution of low-surface-tension metal catalyzed growth of silicon nanowires journal March 2011
Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers journal October 2016
Kinetics of plasma oxidation of germanium-tin (GeSn) journal December 2017
Surface oxidation states of germanium journal July 1986
Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment journal June 2013
Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements journal September 2011
Flash lamp annealing processing to improve the performance of high-Sn content GeSn n-MOSFETs journal August 2021
XPS study of the growth kinetics of thin films obtained by thermal oxidation of germanium substrates journal June 1999
The Kinetics of the Reaction of Germanium and Oxygen journal September 1951
Hydrogen in germanium journal August 2006
Growth of Oxide Layer on Germanium (011) Substrate Under dry and wet Atmospheres journal December 1999
Coupling of coherent misfit strain and composition distributions in core–shell Ge/Ge1-xSnx nanowire light emitters journal March 2019
Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy journal October 2017
A surface study of the oxidation of polycrystalline tin journal July 1987
Effects of Annealing on the Behavior of Sn in GeSn Alloy and GeSn-Based Photodetectors journal August 2020
Desorption kinetics of GeO from GeO2/Ge structure journal September 2010
Post-growth annealing of germanium-tin alloys using pulsed excimer laser journal July 2015
Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission journal November 2020
Bending and precipitate formation mechanisms in epitaxial Ge-core/GeSn-shell nanowires journal January 2021
Thermal oxidation kinetics of germanium journal July 2017
Thermal Stability of Annealed Germanium-Tin Alloys Grown by Molecular Beam Epitaxy journal January 2017
Ultrafast Na Transport into Crystalline Sn via Dislocation‐Pipe Diffusion journal November 2021
Formation of high-quality oxide/Ge1−xSnx interface with high surface Sn content by controlling Sn migration journal September 2014
Evolution of vacancy-related defects upon annealing of ion-implanted germanium journal August 2008
Crystal Quality Improvement of GeSn Alloys by Thermal Annealing journal August 2014
In Situ Studies of Germanium-Tin and Silicon-Germanium-Tin Thermal Stability journal August 2014
Many-electron singularity in X-ray photoemission and X-ray line spectra from metals journal February 1970

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