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Gate-Tunable Anomalous Hall Effect in Stacked van der Waals Ferromagnetic Insulator–Topological Insulator Heterostructures

Journal Article · · Nano Letters
 [1];  [2];  [3];  [4];  [5]
  1. Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States; Purdue Quantum Science and Engineering Institute and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
  2. WPI Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577, Japan
  3. Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
  4. WPI Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577, Japan; Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  5. Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States; Purdue Quantum Science and Engineering Institute and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States; WPI Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577, Japan; School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States; Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, 8000 Aarhus-C, Denmark
Not provided.
Research Organization:
National Quantum Information Science (QIS) Research Centers (United States). The Quantum Science Center (QSC)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-00OR22725
OSTI ID:
2424069
Journal Information:
Nano Letters, Journal Name: Nano Letters Journal Issue: 20 Vol. 22; ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English

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