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Single crystal growth and electronic structure of Rh-doped Sr 3 Ir 2 O 7

Journal Article · · Chinese Physics B

Ruddlesden-Popper iridate Sr3Ir2O7is a spin–orbit coupled Mott insulator. Hole doped Sr3Ir2O7provides an ideal platform to study the exotic quantum phenomena that occur near the metal–insulator transition (MIT) region. Rh substitution of Ir is an effective method to induce hole doping into Sr3Ir2O7. However, the highest doping level reported in Sr3(Ir1−xRhx)2O7single crystals was only around 3%, which is far from the MIT region. In this paper, we report the successful growth of single crystals of Sr3(Ir1−xRhx)2O7with a doping level of ~ 9%. The samples have been fully characterized, demonstrating the high quality of the single crystals. Transport measurements have been carried out, confirming the tendency of MIT in these samples. The electronic structure has also been examined by angle-resolved photoemission spectroscopy (ARPES) measurements. Our results establish a platform to investigate the heavily hole doped Sr3Ir2O7compound, which also provide new insights into the MIT with hole doping in this material system.

Research Organization:
SLAC National Accelerator Laboratory, Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-76SF00515
OSTI ID:
2423930
Journal Information:
Chinese Physics B, Journal Name: Chinese Physics B Journal Issue: 8 Vol. 32; ISSN 1674-1056
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English

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