Selective Area Epitaxy of GaN Nanostructures: MBE Growth and Morphological Analysis

Hasan, Syed M.  N.; You, Weicheng; Ghosh, Arnob; Sadaf, Sharif Md.; Arafin, Shamsul

doi:10.1021/acs.cgd.2c01506

Selective Area Epitaxy of GaN Nanostructures: MBE Growth and Morphological Analysis

Journal Article · 16 May 2023 · Crystal Growth and Design

DOI:https://doi.org/10.1021/acs.cgd.2c01506· OSTI ID:2422552

Hasan, Syed M. N. ^[1]; You, Weicheng ^[1]; Ghosh, Arnob ^[1]; Sadaf, Sharif Md. ^[2]; ^[1]

Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, United States
Centre Energie, Matériaux et Télécommunications, Institut National de la Recherche Scientifique (INRS)-Université du Québec, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2, Canada

Not provided.

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies (CINT)

Sponsoring Organization:: USDOE

DOE Contract Number:: 89233218CNA000001

OSTI ID:: 2422552

Journal Information:: Crystal Growth and Design, Journal Name: Crystal Growth and Design Journal Issue: 6 Vol. 23; ISSN 1528-7483

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

References (38)

Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy Pantle, Florian; Karlinger, Monika; Wörle, Simon Journal of Applied Physics, Vol. 132, Issue 18 https://doi.org/10.1063/5.0098016	journal	November 2022
Enhancement-Mode Tri-Gate Nanowire InAlN/GaN MOSHEMT for Power Applications Huang, Yi-Ping; Hsu, Wei-Chou; Liu, Han-Yin IEEE Electron Device Letters, Vol. 40, Issue 6 https://doi.org/10.1109/LED.2019.2911698	journal	June 2019
Exploring the Size Limitations of Wurtzite III–V Film Growth Staudinger, Philipp; Moselund, Kirsten E.; Schmid, Heinz Nano Letters, Vol. 20, Issue 1 https://doi.org/10.1021/acs.nanolett.9b04507	journal	December 2019
Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE Tourbot, G.; Bougerol, C.; Grenier, A. Nanotechnology, Vol. 22, Issue 7 https://doi.org/10.1088/0957-4484/22/7/075601	journal	January 2011
GaN FinFETs and trigate devices for power and RF applications: review and perspective Zhang, Yuhao; Zubair, Ahmad; Liu, Zhihong Semiconductor Science and Technology, Vol. 36, Issue 5 https://doi.org/10.1088/1361-6641/abde17	journal	March 2021
Microscopic origins of surface states on nitride surfaces Van de Walle, Chris G.; Segev, David Journal of Applied Physics, Vol. 101, Issue 8 https://doi.org/10.1063/1.2722731	journal	April 2007
Visible light-driven efficient overall water splitting using p-type metal-nitride nanowire arrays Kibria, M. G.; Chowdhury, F. A.; Zhao, S. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7797	journal	April 2015
Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes Sadaf, S. M.; Ra, Y. -H.; Nguyen, H. P. T. Nano Letters, Vol. 15, Issue 10 https://doi.org/10.1021/acs.nanolett.5b02515	journal	September 2015
Cathodoluminescence and scanning transmission electron microscopy study of InGaN/GaN quantum wells in core-shell GaN nanowires Yi, Wei; Uzuhashi, Jun; Chen, Jun Applied Physics Express, Vol. 12, Issue 8 https://doi.org/10.7567/1882-0786/ab2e37	journal	July 2019
Photoluminescence Detection of Surface Oxidation Processes on InGaN/GaN Nanowire Arrays Maier, Konrad; Helwig, Andreas; Müller, Gerhard ACS Sensors, Vol. 3, Issue 11 https://doi.org/10.1021/acssensors.8b00417	journal	October 2018
Recent Progress of Electrically Pumped AlGaN Diode Lasers in the UV-B and -C Bands Hasan, Syed M. N.; You, Weicheng; Sumon, Md Saiful Islam Photonics, Vol. 8, Issue 7 https://doi.org/10.3390/photonics8070267	journal	July 2021
Formation Mechanisms of GaN Nanowires Grown by Selective Area Growth Homoepitaxy Gačević, Žarko; Gómez Sánchez, Daniel; Calleja, Enrique Nano Letters, Vol. 15, Issue 2 https://doi.org/10.1021/nl504099s	journal	January 2015
Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls Hartmann, Jana; Steib, Frederik; Zhou, Hao Journal of Crystal Growth, Vol. 476 https://doi.org/10.1016/j.jcrysgro.2017.08.021	journal	October 2017
Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces Choi, Soojeong; Kim, Tong-Ho; Everitt, Henry O. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, Vol. 25, Issue 3 https://doi.org/10.1116/1.2720856	journal	May 2007
Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates Roshko, Alexana; Brubaker, Matt; Blanchard, Paul Crystals, Vol. 8, Issue 9 https://doi.org/10.3390/cryst8090366	journal	September 2018
Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory Gridchin, Vladislav O.; Dvoretckaia, Liliia N.; Kotlyar, Konstantin P. Nanomaterials, Vol. 12, Issue 14 https://doi.org/10.3390/nano12142341	journal	July 2022
Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes Nami, Mohsen; Stricklin, Isaac E.; DaVico, Kenneth M. Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-017-18833-6	journal	January 2018
Quantitative description for the growth rate of self-induced GaN nanowires Consonni, V.; Dubrovskii, V. G.; Trampert, A. Physical Review B, Vol. 85, Issue 15 https://doi.org/10.1103/PhysRevB.85.155313	journal	April 2012
High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111) Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander Nano Letters, Vol. 15, Issue 4 https://doi.org/10.1021/nl504447j	journal	March 2015
Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates Pantle, Florian; Becker, Fabian; Kraut, Max Nanoscale Advances, Vol. 3, Issue 13 https://doi.org/10.1039/D1NA00221J	journal	January 2021
High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy Hartmann, Jana; Steib, Frederik; Zhou, Hao Crystal Growth & Design, Vol. 16, Issue 3 https://doi.org/10.1021/acs.cgd.5b01598	journal	January 2016
Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot Deshpande, Saniya; Frost, Thomas; Hazari, Arnab Applied Physics Letters, Vol. 105, Issue 14 https://doi.org/10.1063/1.4897640	journal	October 2014
Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition Lin, Yen-Ting; Yeh, Ting-Wei; Daniel Dapkus, P. Nanotechnology, Vol. 23, Issue 46 https://doi.org/10.1088/0957-4484/23/46/465601	journal	October 2012
GaN nanodiscs embedded in nanowires as optochemical transducers Teubert, J.; Becker, P.; Furtmayr, F. Nanotechnology, Vol. 22, Issue 27 https://doi.org/10.1088/0957-4484/22/27/275505	journal	May 2011
Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy Bertness, K. A.; Roshko, A.; Mansfield, L. M. Journal of Crystal Growth, Vol. 310, Issue 13 https://doi.org/10.1016/j.jcrysgro.2008.03.033	journal	June 2008
Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns Sekiguchi, Hiroto; Kishino, Katsumi; Kikuchi, Akihiko Applied Physics Express, Vol. 1 https://doi.org/10.1143/APEX.1.124002	journal	December 2008
Aluminum nitride as a new material for chip-scale optomechanics and nonlinear optics Xiong, Chi; Pernice, Wolfram H. P.; Sun, Xiankai New Journal of Physics, Vol. 14, Issue 9 https://doi.org/10.1088/1367-2630/14/9/095014	journal	September 2012
Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy Kishino, K.; Hoshino, T.; Ishizawa, S. Electronics Letters, Vol. 44, Issue 13 https://doi.org/10.1049/el:20081323	journal	January 2008
Computing Equilibrium Shapes of Wurtzite Crystals: The Example of GaN Li, Hong; Geelhaar, Lutz; Riechert, Henning Physical Review Letters, Vol. 115, Issue 8 https://doi.org/10.1103/PhysRevLett.115.085503	journal	August 2015
Position-Controlled Growth of GaN Nanowires and Nanotubes on Diamond by Molecular Beam Epitaxy Schuster, Fabian; Hetzl, Martin; Weiszer, Saskia Nano Letters, Vol. 15, Issue 3 https://doi.org/10.1021/nl504446r	journal	February 2015
Selectively grown GaN nanowalls and nanogrids for photocatalysis: growth and optical properties Winnerl, Julia; Kraut, Max; Artmeier, Sabrina Nanoscale, Vol. 11, Issue 10 https://doi.org/10.1039/C8NR09094G	journal	January 2019
Electrochemical CO ₂ Reduction into Chemical Feedstocks: From Mechanistic Electrocatalysis Models to System Design Kibria, Md Golam; Edwards, Jonathan P.; Gabardo, Christine M. Advanced Materials, Vol. 31, Issue 31 https://doi.org/10.1002/adma.201807166	journal	December 2018
Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity Fernández-Garrido, Sergio; Kong, Xiang; Gotschke, Tobias Nano Letters, Vol. 12, Issue 12 https://doi.org/10.1021/nl302664q	journal	November 2012
Progress in quantum-dot single photon sources for quantum information technologies: A broad spectrum overview Arakawa, Yasuhiko; Holmes, Mark J. Applied Physics Reviews, Vol. 7, Issue 2 https://doi.org/10.1063/5.0010193	journal	June 2020
Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions Yuan, Xiaoming; Pan, Dong; Zhou, Yijin Applied Physics Reviews, Vol. 8, Issue 2 https://doi.org/10.1063/5.0044706	journal	June 2021
Selective area growth of GaN nanowires on Si(1 1 1) substrate with Ti masks by molecular beam epitaxy Li, Gang; Yao, Yangyi; Dagenais, Mario Journal of Crystal Growth, Vol. 524 https://doi.org/10.1016/j.jcrysgro.2019.125181	journal	October 2019
Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy Guo, Wei; Zhang, Meng; Banerjee, Animesh Nano Letters, Vol. 10, Issue 9 https://doi.org/10.1021/nl101027x	journal	September 2010
Effects of InGaN quantum disk thickness on the optical properties of GaN nanowires M. N. Hasan, Syed; Ghosh, Arnob; Md Sadaf, Sharif Journal of Crystal Growth, Vol. 588 https://doi.org/10.1016/j.jcrysgro.2022.126654	journal	June 2022

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