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Insights into the performance of InAs-based devices in extreme environments from multiscale simulations

Journal Article · · Applied Physics. A, Materials Science and Processing
Not provided.
Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
89233119CNA000103; 89233119SNA000103
OSTI ID:
2422524
Journal Information:
Applied Physics. A, Materials Science and Processing, Journal Name: Applied Physics. A, Materials Science and Processing Journal Issue: 7 Vol. 129; ISSN 0947-8396
Publisher:
Springer
Country of Publication:
United States
Language:
English

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Neutron Radiation Effects on the Electrical Characteristics of InAs/GaAs Quantum Dot-in-a-Well Structures journal December 2015
First-Principles Assessment of the Structure and Stability of 15 Intrinsic Point Defects in Zinc-Blende Indium Arsenide journal January 2019
Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes journal October 2021
Radiation Effects in AlGaN/GaN HEMTs journal May 2022
Stochastic Gain Degradation in III–V Heterojunction Bipolar Transistors Due to Single Particle Displacement Damage journal January 2018
Atmospheric Neutron Radiation Response of III–V Binary Compound Semiconductors journal July 2020
Displacement Damage Dose Analysis of Alpha-ray Degradation on Output of an InGaP Solar Cell conference June 2020
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Neutron Radiation Effect On 2N2222 And NTE 123 NPN Silicon Bipolar Junction Transistors journal December 2013
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journal November 2021
Machine learning the Hubbard U parameter in DFT+U using Bayesian optimization journal November 2020
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Ab initio molecular dynamics simulation of the radiation damage effects of GaAs/AlGaAs superlattice journal April 2019
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Proton radiation effect on InAs avalanche photodiodes journal February 2017
Energy level tuned indium arsenide colloidal quantum dot films for efficient photovoltaics journal October 2018

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