A novel Ni/Y2O3/4H-SiC heteroepitaxial metal–oxide–semiconductor (MOS) betavoltaic cell

Chaudhuri, Sandeep K.; Nag, Ritwik; Mandal, Krishna C.

doi:10.1007/s10854-023-09971-x

A novel Ni/Y2O3/4H-SiC heteroepitaxial metal–oxide–semiconductor (MOS) betavoltaic cell

Journal Article · 31 January 2023 · Journal of Materials Science. Materials in Electronics

DOI:https://doi.org/10.1007/s10854-023-09971-x· OSTI ID:2422439

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OSTI

Not provided.

Research Organization:: Univ. of South Carolina, Columbia, SC (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE)

DOE Contract Number:: NE0008662

OSTI ID:: 2422439

Journal Information:: Journal of Materials Science. Materials in Electronics, Journal Name: Journal of Materials Science. Materials in Electronics Journal Issue: 6 Vol. 34; ISSN 0957-4522

Publisher:: Springer

Country of Publication:: United States

Language:: English

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