Impenetrable Barrier at the Metal–Mott Insulator Junction in Polymorphic 1H and 1T NbSe 2 Lateral Heterostructure

Zhang, Huimin; Yan, Chenhui; Ge, Zhuozhi; Weinert, Michael; Li, Lian

doi:10.1021/acs.jpclett.2c02546

Impenetrable Barrier at the Metal–Mott Insulator Junction in Polymorphic 1H and 1T NbSe ₂ Lateral Heterostructure

Journal Article · 10 November 2022 · Journal of Physical Chemistry Letters

DOI:https://doi.org/10.1021/acs.jpclett.2c02546· OSTI ID:2421923

^[1]; ^[2]; ^[2]; ^[3]; Li, Lian ^[2]

Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States; State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024, China; OSTI
Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States
Department of Physics, University of Wisconsin, Milwaukee, Wisconsin 53201, United States

Not provided.

Research Organization:: West Virginia Univ., Morgantown, WV (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0021393

OSTI ID:: 2421923

Journal Information:: Journal of Physical Chemistry Letters, Journal Name: Journal of Physical Chemistry Letters Journal Issue: 46 Vol. 13; ISSN 1948-7185

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

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