Anisotropic electrical properties of NiO x /β-Ga 2 O 3 p-n heterojunctions on (2̅01), (001), and (010) crystal orientations

Mudiyanselage, Dinusha Herath; Mandia, Ramandeep; Wang, Dawei; Adivarahan, Jayashree; He, Ziyi; Fu, Kai; Zhao, Yuji; McCartney, Martha R.; Smith, David J.; Fu, Houqiang

doi:10.35848/1882-0786/acf8ad

Anisotropic electrical properties of NiO _x /β-Ga ₂ O ₃ p-n heterojunctions on (2̅01), (001), and (010) crystal orientations

Journal Article · 01 September 2023 · Applied Physics Express

DOI:https://doi.org/10.35848/1882-0786/acf8ad· OSTI ID:2421819

^[1]; Mandia, Ramandeep; Wang, Dawei; Adivarahan, Jayashree; He, Ziyi; Fu, Kai; Zhao, Yuji; McCartney, Martha R.; Smith, David J.;

OSTI

Abstract

NiO_x/β-Ga₂O₃p-nheterojunctions fabricated on $(\overset{̅}{2} 01),$ $(001),$ and $(010)$ β-Ga₂O₃substrates show distinctly anisotropic electrical properties. All three devices exhibited excellent rectification ≥10⁹, and turn-on voltages >2.0 V. The $(010)$ device showed very different turn-on voltage, specific on-resistance, and reverse recovery time compared with $(\overset{̅}{2} 01)$ and $(001)$ devices. Moreover, it is calculated that the interface trap state densities for $(\overset{̅}{2} 01),$ $(001),$ and $(010)$ plane devices are 4.3 × 10¹⁰, 7.4 × 10¹⁰, and 1.6 × 10¹¹eV^–1cm^–2, respectively. These differences in the NiO_x/β-Ga₂O₃heterojunctions are attributed to the different atomic configurations, the density of dangling bonds, and interface trap state densities.

Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0021230

OSTI ID:: 2421819

Journal Information:: Applied Physics Express, Journal Name: Applied Physics Express Journal Issue: 9 Vol. 16; ISSN 1882-0778

Publisher:: Japan Society of Applied Physics

Country of Publication:: United States

Language:: English

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Anisotropic electrical properties of NiO _x /β-Ga ₂ O ₃ p-n heterojunctions on (2̅01), (001), and (010) crystal orientations