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Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement

Journal Article · · IEEE Electron Device Letters
Not provided.
Research Organization:
Pennsylvania State Univ., University Park, PA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
SC0021118
OSTI ID:
2421736
Journal Information:
IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 9 Vol. 44; ISSN 0741-3106
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

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Ferroelectric field-effect transistors based on HfO2: a review journal September 2021
Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics journal January 2001
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Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications conference December 2019
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A 2TnC ferroelectric memory gain cell suitable for compute-in-memory and neuromorphic application conference December 2019
Compact Ferroelectric Programmable Majority Gate for Compute-in-Memory Applications conference December 2022
High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application conference May 2021
Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure journal December 2021
Ferroelectric FETs With Separated Capacitor in the Back-End-of-Line: Role of the Capacitance Ratio journal November 2022
Ferroelectric Ternary Content Addressable Memories for Energy-Efficient Associative Search journal April 2023
An Ultra-Dense 2FeFET TCAM Design Based on a Multi-Domain FeFET Model journal September 2019
0.18-$muhboxm$Nondestructive Readout FeRAM Using Charge Compensation Technique journal December 2005
Nondestructive Readout of Ferroelectric-Gate Field-Effect Transistor Memory With an Intermediate Electrode by Using an Improved Operation Method journal November 2008
Improvement in Long-Term and High-Temperature Retention Stability of Ferroelectric Field-Effect Memory Transistors With Metal–Ferroelectric–Metal–Insulator–Semiconductor Gate-Stacks Using Al-Doped HfO2 Thin Films journal February 2020
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Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer conference June 2022
NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great Memory Wall with 10 ns of PGM-pulse, 1010 Cycles of Endurance, and Decade Lifetime at 103 °C conference June 2022
Exploring sub-20nm FinFET design with predictive technology models conference June 2012
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Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects journal January 2015

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