Two-Terminal MoS 2 Memristor and the Homogeneous Integration with a MoS 2 Transistor for Neural Networks

Fu, Shuai; Park, Ji-Hoon; Gao, Hongyan; Zhang, Tianyi; Ji, Xiang; Fu, Tianda; Sun, Lu; Kong, Jing; Yao, Jun

doi:10.1021/acs.nanolett.2c05007

Two-Terminal MoS ₂ Memristor and the Homogeneous Integration with a MoS ₂ Transistor for Neural Networks

Journal Article · 20 June 2023 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.2c05007· OSTI ID:2421404

Fu, Shuai ^[1]; Park, Ji-Hoon ^[2]; ^[3]; ^[2]; Ji, Xiang ^[2]; ^[3]; ^[3]; ^[2]; ^[4]

Department of Electrical Computer and Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States; OSTI
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
Department of Electrical Computer and Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States
Department of Electrical Computer and Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States; Institute for Applied Life Sciences (IALS), University of Massachusetts, Amherst, Massachusetts 01003, United States; Department of Biomedical Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States

Not provided.

Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0020042

OSTI ID:: 2421404

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 13 Vol. 23; ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

References (42)

A non-volatile AND gate based on Al2O3/HfO2/Al2O3 charge-trap stack for in-situ storage applications Li, Jingyu; Zhang, Heng; Ding, Yi Science Bulletin, Vol. 64, Issue 20 https://doi.org/10.1016/j.scib.2019.08.012	journal	October 2019
Nanowire nanocomputer as a finite-state machine Yao, J.; Yan, H.; Das, S. Proceedings of the National Academy of Sciences, Vol. 111, Issue 7 https://doi.org/10.1073/pnas.1323818111	journal	January 2014
Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor Jiang, Hao; Han, Lili; Lin, Peng Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep28525	journal	June 2016
Bioinspired bio-voltage memristors Fu, Tianda; Liu, Xiaomeng; Gao, Hongyan Nature Communications, Vol. 11, Issue 1 https://doi.org/10.1038/s41467-020-15759-y	journal	April 2020
A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing Tang, Jian; He, Congli; Tang, Jianshi Advanced Functional Materials, Vol. 31, Issue 27 https://doi.org/10.1002/adfm.202011083	journal	March 2021
Channel Length Scaling of MoS ₂ MOSFETs Liu, Han; Neal, Adam T.; Ye, Peide D. ACS Nano, Vol. 6, Issue 10 https://doi.org/10.1021/nn303513c	journal	September 2012
Memory devices and applications for in-memory computing Sebastian, Abu; Le Gallo, Manuel; Khaddam-Aljameh, Riduan Nature Nanotechnology, Vol. 15, Issue 7 https://doi.org/10.1038/s41565-020-0655-z	journal	March 2020
Ultralow contact resistance between semimetal and monolayer semiconductors Shen, Pin-Chun; Su, Cong; Lin, Yuxuan Nature, Vol. 593, Issue 7858 https://doi.org/10.1038/s41586-021-03472-9	journal	May 2021
Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing Zhu, Xiaojian; Li, Da; Liang, Xiaogan Nature Materials, Vol. 18, Issue 2 https://doi.org/10.1038/s41563-018-0248-5	journal	December 2018
Ultrathin Three-Monolayer Tunneling Memory Selectors Wang, Ching-Hua; Chen, Victoria; McClellan, Connor J. ACS Nano, Vol. 15, Issue 5 https://doi.org/10.1021/acsnano.1c00002	journal	May 2021
Understanding memristive switching via in situ characterization and device modeling Sun, Wen; Gao, Bin; Chi, Miaofang Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-11411-6	journal	August 2019
Impact of device scaling on the electrical properties of MoS2 field-effect transistors Arutchelvan, Goutham; Smets, Quentin; Verreck, Devin Scientific Reports, Vol. 11, Issue 1 https://doi.org/10.1038/s41598-021-85968-y	journal	March 2021
Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au−Al2O3 -Cr metal-insulator-metal structures Fry-Bouriaux, L.; Rosamond, M. C.; Williams, D. A. Physical Review B, Vol. 96, Issue 11 https://doi.org/10.1103/PhysRevB.96.115435	journal	September 2017
Physical mechanisms of endurance degradation in TMO-RRAM Chen, B.; Lu, Y.; Gao, B. 2011 International Electron Devices Meeting https://doi.org/10.1109/IEDM.2011.6131539	conference	December 2011
Logic-in-memory based on an atomically thin semiconductor Migliato Marega, Guilherme; Zhao, Yanfei; Avsar, Ahmet Nature, Vol. 587, Issue 7832 https://doi.org/10.1038/s41586-020-2861-0	journal	November 2020
Research progress on solutions to the sneak path issue in memristor crossbar arrays Shi, Lingyun; Zheng, Guohao; Tian, Bobo Nanoscale Advances, Vol. 2, Issue 5 https://doi.org/10.1039/D0NA00100G	journal	January 2020
Programmable nanowire circuits for nanoprocessors Yan, Hao; Choe, Hwan Sung; Nam, SungWoo Nature, Vol. 470, Issue 7333 https://doi.org/10.1038/nature09749	journal	February 2011
Mixed-precision architecture based on computational memory for training deep neural networks Nandakumar, S. R.; Le Gallo, Manuel; Boybat, Irem 2018 IEEE International Symposium on Circuits and Systems (ISCAS) https://doi.org/10.1109/ISCAS.2018.8351656	conference	January 2018
Recent progress in bio-voltage memristors working with ultralow voltage of biological amplitude Fu, Tianda; Fu, Shuai; Yao, Jun Nanoscale, Vol. 15, Issue 10 https://doi.org/10.1039/D2NR06773K	journal	January 2023
Memristive crossbar arrays for brain-inspired computing Xia, Qiangfei; Yang, J. Joshua Nature Materials, Vol. 18, Issue 4 https://doi.org/10.1038/s41563-019-0291-x	journal	March 2019
Efficient and self-adaptive in-situ learning in multilayer memristor neural networks Li, Can; Belkin, Daniel; Li, Yunning Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-04484-2	journal	June 2018
An Effective Sneak‐Path Solution Based on a Transient‐Relaxation Device Fu, Tianda; Fu, Shuai; Sun, Lu Advanced Materials, Vol. 35, Issue 1 https://doi.org/10.1002/adma.202207133	journal	November 2022
Low-Frequency Electronic Noise in Single-Layer MoS ₂ Transistors Sangwan, Vinod K.; Arnold, Heather N.; Jariwala, Deep Nano Letters, Vol. 13, Issue 9 https://doi.org/10.1021/nl402150r	journal	August 2013
Deterministic Assembly of Three-Dimensional Suspended Nanowire Structures Gao, Hongyan; Yin, Bing; Wu, Siyu Nano Letters, Vol. 19, Issue 8 https://doi.org/10.1021/acs.nanolett.9b02198	journal	July 2019
Two-Terminal Nonvolatile Memories Based on Single-Walled Carbon Nanotubes Yao, Jun; Jin, Zhong; Zhong, Lin ACS Nano, Vol. 3, Issue 12 https://doi.org/10.1021/nn901263e	journal	November 2009
Synthesis of High‐Performance Monolayer Molybdenum Disulfide at Low Temperature Park, Ji‐Hoon; Lu, Ang‐Yu; Shen, Pin‐Chun Small Methods, Vol. 5, Issue 6 https://doi.org/10.1002/smtd.202000720	journal	April 2021
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory Kwon, Deok-Hwang; Kim, Kyung Min; Jang, Jae Hyuck Nature Nanotechnology, Vol. 5, Issue 2 https://doi.org/10.1038/nnano.2009.456	journal	January 2010
The future of electronics based on memristive systems Zidan, Mohammed A.; Strachan, John Paul; Lu, Wei D. Nature Electronics, Vol. 1, Issue 1 https://doi.org/10.1038/s41928-017-0006-8	journal	January 2018
ZnO nanowire-based nano-floating gate memory with Pt nanocrystals embedded in Al₂O₃gate oxides Yeom, Donghyuk; Kang, Jeongmin; Lee, Myoungwon Nanotechnology, Vol. 19, Issue 39 https://doi.org/10.1088/0957-4484/19/39/395204	journal	August 2008
Resistive switching materials for information processing Wang, Zhongrui; Wu, Huaqiang; Burr, Geoffrey W. Nature Reviews Materials, Vol. 5, Issue 3 https://doi.org/10.1038/s41578-019-0159-3	journal	January 2020
Implementing in-situ self-organizing maps with memristor crossbar arrays for data mining and optimization Wang, Rui; Shi, Tuo; Zhang, Xumeng Nature Communications, Vol. 13, Issue 1 https://doi.org/10.1038/s41467-022-29411-4	journal	April 2022
Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio Vu, Quoc An; Shin, Yong Seon; Kim, Young Rae Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms12725	journal	September 2016
Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing Feng, Xuewei; Li, Sifan; Wong, Swee Liang ACS Nano, Vol. 15, Issue 1 https://doi.org/10.1021/acsnano.0c09441	journal	January 2021
In situ imaging of the conducting filament in a silicon oxide resistive switch Yao, Jun; Zhong, Lin; Natelson, Douglas Scientific Reports, Vol. 2, Issue 1 https://doi.org/10.1038/srep00242	journal	January 2012
Training and operation of an integrated neuromorphic network based on metal-oxide memristors Prezioso, M.; Merrikh-Bayat, F.; Hoskins, B. D. Nature, Vol. 521, Issue 7550 https://doi.org/10.1038/nature14441	journal	May 2015
Future of dynamic random-access memory as main memory Kim, Seong Keun; Popovici, Mihaela MRS Bulletin, Vol. 43, Issue 5 https://doi.org/10.1557/mrs.2018.95	journal	May 2018
Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide Sangwan, Vinod K.; Lee, Hong-Sub; Bergeron, Hadallia Nature, Vol. 554, Issue 7693 https://doi.org/10.1038/nature25747	journal	February 2018
Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS₂ Migliato Marega, Guilherme; Wang, Zhenyu; Paliy, Maksym ACS Nano, Vol. 16, Issue 3 https://doi.org/10.1021/acsnano.1c07065	journal	February 2022
Flash Memory Array for Efficient Implementation of Deep Neural Networks Han, Runze; Xiang, Yachen; Huang, Peng Advanced Intelligent Systems, Vol. 3, Issue 5 https://doi.org/10.1002/aisy.202000161	journal	December 2020
An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations Wang, Yin; Tang, Hongwei; Xie, Yufeng Nature Communications, Vol. 12, Issue 1 https://doi.org/10.1038/s41467-021-23719-3	journal	June 2021
Bioinspired two-in-one nanotransistor sensor for the simultaneous measurements of electrical and mechanical cellular responses Gao, Hongyan; Yang, Feiyu; Sattari, Kianoosh Science Advances, Vol. 8, Issue 34 https://doi.org/10.1126/sciadv.abn2485	journal	August 2022
MoS ₂ Memristors Exhibiting Variable Switching Characteristics toward Biorealistic Synaptic Emulation Li, Da; Wu, Bin; Zhu, Xiaojian ACS Nano, Vol. 12, Issue 9 https://doi.org/10.1021/acsnano.8b03977	journal	September 2018

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