Sensing the Local Magnetic Environment through Optically Active Defects in a Layered Magnetic Semiconductor

Klein, Julian; Song, Zhigang; Pingault, Benjamin; Dirnberger, Florian; Chi, Hang; Curtis, Jonathan B.; Dana, Rami; Bushati, Rezlind; Quan, Jiamin; Dekanovsky, Lukas; Sofer, Zdenek; Alù, Andrea; Menon, Vinod M.; Moodera, Jagadeesh S.; Lončar, Marko; Narang, Prineha; Ross, Frances M.

doi:10.1021/acsnano.2c07655

Sensing the Local Magnetic Environment through Optically Active Defects in a Layered Magnetic Semiconductor

Journal Article · 20 December 2022 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.2c07655· OSTI ID:2421170

^[1]; Song, Zhigang ^[2]; Pingault, Benjamin ^[3]; Dirnberger, Florian ^[4]; ^[5]; Curtis, Jonathan B. ^[2]; Dana, Rami ^[6]; Bushati, Rezlind ^[7]; Quan, Jiamin ^[8]; Dekanovsky, Lukas ^[9]; Sofer, Zdenek ^[9]; Alù, Andrea ^[8]; ^[7]; Moodera, Jagadeesh S. ^[10]; Lončar, Marko ^[11]; ^[2]; ^[6]

Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States; OSTI
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts02138, United States; College of Letters and Science, UCLA, Los Angeles, California90095, United States
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts02138, United States; QuTech, Delft University of Technology, 2600 GADelft, The Netherlands
Department of Physics, City College of New York, New York, New York10031, United States
Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States; U.S. Army CCDC Army Research Laboratory, Adelphi, Maryland20783, United States
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
Department of Physics, City College of New York, New York, New York10031, United States; Department of Physics, The Graduate Center, City University of New York, New York, New York10016, United States
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas78712, United States; Photonics Initiative, CUNY Advanced Science Research Center, New York, New York10031, United States; Department of Electrical Engineering, City College of the City University of New York, New York, New York10031, United States; Physics Program, Graduate Center, City University of New York, New York, New York10026, United States
Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28Prague 6, Czech Republic
Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States; Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts02138, United States

Not provided.

Research Organization:: Georgia Institute of Technology, Atlanta, GA (United States); California Institute of Technology (CalTech), Pasadena, CA (United States); Carnegie Mellon Univ., Pittsburgh, PA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0019336; SC0020376; SC0022277

OSTI ID:: 2421170

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 1 Vol. 17; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

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